|
|
PDF MRF6S19100HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S19100HR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF6S19100HR3 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
• TPTyroapuftifci=cal2C22o-dWCeaastrtr8sieTArhvNrgo-.u,CgFDhuMl1l AF3)rPeCeqhrufaoenrnmnceyalnBBcaaenn:ddV,wDISiDd-t=h952=8(1PV.i2olo2ltt8s, 8,SIyMDnQHc,=z.P9Pa0Ag0iRnmg=A, ,
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc @ 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Input and Output Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• Pb - Free and RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S19100H
Rev. 3, 8/2005
MRF6S19100HR3
MRF6S19100HSR3
1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
398
2.3
Storage Temperature Range
Operating Junction Temperature
CW Operation
Tstg - 65 to +150
TJ 200
CW 100
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
RθJC
0.44
0.50
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
1
1 page  
www.datasheet4u.com
TYPICAL CHARACTERISTICS
16.6 ηD
29
16.4
Gps
27
16.2 25
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 900 mA
16 IM3 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
−35 −5
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
15.8 IRL @ 0.01% Probability (CCDF)
−41 −10
15.6
ACPR
−47 −15
15.4
1930
1940
1950 1960
1970 1980
−53
1990
−20
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg.
16.2
ηD
16
Gps
15.8
42
40
38
15.6 IM3
VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 900 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
−25
−5
15.4
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
−30
15.2 IRL
@ 0.01% Probability (CCDF)
−10
−35
15 ACPR
−40 −15
14.8 −45
1930 1940 1950 1960 1970 1980 1990
−20
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 44 Watts Avg.
18
IDQ = 1300 mA
17
1125 mA
16 900 mA
15 675 mA
450 mA
14
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
13
1 10 100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−15
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
−20 Two−Tone Measurements, 2.5 MHz Tone Spacing
−25
−30
IDQ = 450 mA
−35
675 mA
−40 1300 mA
−45
−50
900 mA
1125 mA
−55
1
10 100 300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
www.datasheet4u.com
H
E
A
G
1
2X Q
bbb M T A M B M
2
D
bbb M T A M
A
(FLANGE)
3
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
BM
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
C
T
SEATING
PLANE
F
CASE 465 - 06
ISSUE G
NI - 780
MRF6S19100HR3
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
4X U
(FLANGE)
B
4X Z
(LID)
1
B
(FLANGE)
H
E
A
2
D
bbb M T A M
A
(FLANGE)
2X K
BM
N (LID)
ccc M T A M
M (INSULATOR)
bbb M T A M
C
3
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
B M ccc M T A M B M
S (INSULATOR)
B M aaa M T A M B M
F
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S19100HSR3
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U −−− 0.040
Z −−− 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
−−− 1.02
−−− 0.76
0.127 REF
0.254 REF
0.381 REF
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF6S19100HR3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF6S19100HR3 | RF Power Field Effect Transistors | Freescale Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |