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Номер произв MRF6S19100HR3
Описание RF Power Field Effect Transistors
Производители Freescale Semiconductor
логотип Freescale Semiconductor логотип 



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MRF6S19100HR3 Даташит, Описание, Даташиты
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
TPTyroapuftifci=cal2C22o-dWCeaastrtr8sieTArhvNrgo-.u,CgFDhuMl1l AF3)rPeCeqhrufaoenrnmnceyalnBBcaaenn:ddV,wDISiDd-t=h952=8(1PV.i2olo2ltt8s, 8,SIyMDnQHc,=z.P9Pa0Ag0iRnmg=A, ,
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc @ 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Input and Output Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
Pb - Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S19100H
Rev. 3, 8/2005
MRF6S19100HR3
MRF6S19100HSR3
1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
398
2.3
Storage Temperature Range
Operating Junction Temperature
CW Operation
Tstg - 65 to +150
TJ 200
CW 100
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
RθJC
0.44
0.50
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
1









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MRF6S19100HR3 Даташит, Описание, Даташиты
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3A (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
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Off Characteristics
Characteristic
Symbol
Min
Typ
Max Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 900 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1
2
3 Vdc
VGS(Q)
2
2.8
4 Vdc
VDS(on)
0.1
0.21
0.3
Vdc
gfs — 5.3 — S
Crss — 1.5 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps 15 16.1 18 dB
Drain Efficiency
ηD 26 28 — %
Intermodulation Distortion
IM3 — - 37 - 35 dBc
Adjacent Channel Power Ratio
ACPR
- 51 - 48 dBc
Input Return Loss
IRL — - 15 - 9 dB
1. Part is internally matched both on input and output.
MRF6S19100HR3 MRF6S19100HSR3
2
RF Device Data
Freescale Semiconductor









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MRF6S19100HR3 Даташит, Описание, Даташиты
RF
INPUT
Z1
www.datasheet4u.com
VBIAS
R2
B1
+
C5 R1
Z2
C1
Z3 Z4
C3
C2
C4
Z5
Z6
DUT
+++
+ VSUPPLY
C7 C8 C9 C10 C11 C12
RF
Z7 Z8 Z9 Z10 Z11 OUTPUT
C6
Z1 0.130x 0.084Microstrip
Z2 0.360x 0.084Microstrip
Z3 0.260x 0.084Microstrip
Z4 0.950x 0.084Microstrip
Z5 0.457x 0.940Microstrip
Z6 0.083x 0.940Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.091x 0.900Microstrip
0.493x 0.900Microstrip
0.440x 0.195Microstrip
0.470x 0.084Microstrip
0.735x 0.084Microstrip
Arlon GX - 0300 - 55 - 22, 0.030, εr = 2.55
Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
B1 RF Bead
2743019447
C1, C2
0.6 - 4.5 pF Variable Capacitors, Gigatronics 27271SL
C3
15 pF Chip Capacitor
100B150CP500X
C4, C7
5.6 pF Chip Capacitors
100B5R6JP500X
C5
1 µF, 50 V Tantalum Chip Capacitor
T491C105K050AS
C6
43 pF Chip Capacitor
100B430CP500X
C8, C10
22 µF, 35 V Tantalum Chip Capacitors
T491X226K035AS
C9
10 µF, 35 V Tantalum Chip Capacitor
T491C106K035AS
C11
0.1 µF Chip Capacitor (1825)
C1825C14J5RAC
C12 100 µF, 50 V Electrolytic Capacitor, Radial MCR50V107M8X11
R1
12 , 1/4 W Chip Resistor (1206)
CRCW120612R0F100
R2
2 kW, 1/4 W Chip Resistor (1206)
CRCW12062001F100
Manufacturer
Fair - Rite
Johanson Dielectrics
ATC
Kemet
Kemet
ATC
Kemet
Kemet
Kemet
Multicomp
Vishay
Vishay
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
3










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