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PDF MRF6S18060NR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6S18060NR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
www.datasGhSeeMt4Au.pcopmlication
• CTyWp,icFaul lGl FSrMeqPueernfocyrmBaanncde:(1V8D0D5=- 128680VdMcH, zIDoQr=1963000-m19A9,0PMouHt =z)60 Watts
Power Gain — 15 dB
Drain Efficiency - 50%
GSM EDGE Application
•
TP19yopu3ti0c=a- 1l29G59S0WMMaEtHtsDz)GAvEgP.,eFrufollrmFraenqcuee:nVcDyDB=an2d6
(V1o8l0ts5,-I1D8Q8=0
450 mA,
MHz or
Power Gain — 15.5 dB
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S18060N
Rev. 3, 5/2006
MRF6S18060NR1
MRF6S18060NBR1
1800 - 2000 MHz, 60 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S18060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S18060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
216
1.2
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 77°C, 25 W CW
RθJC
0.81
0.95
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
1
1 page  
www.datasheet4u.com
VGS
R1
R2
C5
C1
R3
C3 C6
C11
VDS
C2
C9 C10
C7
C8 C4
MRF6S18060N/NB
Rev. 0
Figure 2. MRF6S18060NR1(NBR1) Test Circuit Component Layout — 1900 MHz
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
5
5 Page 
VGS
R1
R2
C1
www.datasheet4u.com
C6
R3
C3 C5
C7
C12
VDS
C2
C10 C11
C8 C9
C4
MRF6S18060N/NB
Rev. 0
Figure 17. MRF6S18060NR1(NBR1) Test Circuit Component Layout — 1800 MHz
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet MRF6S18060NR1.PDF ] | |
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