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PDF MRF19060 Data sheet ( Hoja de datos )
| Número de pieza | MRF19060 | |
| Descripción | RF POWER FIELD EFFECT TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19060/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
www.datas1h.e9etto4u2.c.0omGHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier
applications.
• Typical CDMA Performance: 1960 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 7.5 Watts
Power Gain — 12.5 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
MRF19060
MRF19060R3
MRF19060SR3
1990 MHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF19060R3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC ≥ = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465A–06, STYLE 1
NI–780S
MRF19060SR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
180
1.03
–65 to +150
200
Class
1 (Minimum)
M3 (Minimum)
Max
0.97
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF19060 MRF19060R3 MRF19060SR3
1
1 page  
TYPICAL CHARACTERISTICS
40 0
35 η -5
30
25 IRL
www.datas2h0eet4PVuDouD.tc==o62m06
Vdc
W (PEP),
IDQ
=
500
mA
15 Two-Tone Measurement, 100 kHz Tone Spacing
10 Gps
5 IMD
-10
-15
-20
-25
-30
-35
0 -40
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
45
VDD = 26 Vdc
40 IDQ = 700 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
35 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
30
2.25 MHz
25
885 kHz
20
1.25 MHz
15
η
Gps
10 CDMA 9 Channels Forward
Pilot:0, Paging:1, Traffic:8-13, Sync:32
5
4 8 12 16
Pout, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
-20
-30
-40
-50
-60
-70
-80
-90
-100
20
-25
VDD = 26 Vdc
-30 f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
-35
-40 900 mA
-45
-50
700 mA
-55 500 mA
-60
-65
0.1
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
100
14
900 mA
13 700 mA
12 500 mA
11
VDD = 26 Vdc
f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
10
0.1 1.0 10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 7. Power Gain versus Output Power
-20
VDD = 26 Vdc
-30 IDQ = 700 mA, f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
-40
3rd Order
-50
-60 5th Order
7th Order
-70
-80
0.1
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Products
versus Output Power
100
13.5
Pout = 60 W (PEP), IDQ = 500 mA
f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
13
-22
-24
-26
-28
12.5 Gps -30
IMD
12
-32
-34
-36
11.5
22
24 26 28
VDD, DRAIN VOLTAGE (VOLTS)
30
-38
32
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF19060 MRF19060R3 MRF19060SR3
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF19060.PDF ] | |
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