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PDF MRF19045LR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF19045LR3 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19045/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
www.datas1h.e9ett4ou.2co.0mGHz . Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA
Multi - carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: - 50 dBc @ 30 kHz BW
IM3 — - 37 dBc
• 100% Tested Under 2 - Carrier N - CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19045LR3
MRF19045LSR3
1990 MHz, 45 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF19045LR3
MAXIMUM RATINGS
CASE 465F - 04, STYLE 1
NI - 400S
MRF19045LSR3
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
65
- 0.5, +15
105
0.60
Vdc
Vdc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg - 65 to +150 °C
TJ 200 °C
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
RθJC
1.65
Class
2 (Minimum)
°C/W
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19045LR3 MRF19045LSR3
1
1 page  
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
40
VDD = 26 Vdc
35 IDQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
30
25
www.datash2e0 et4u.com
15
10
IM3
η
ACPR
Gps
− 30
− 35
− 40
− 45
− 50
− 55
− 60
5 −65
0 −70
1 2 3 4 5 6 7 8 9 10 11 12
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 3. 2-Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
− 30
VDD = 26 Vdc
IDQ = 550 mA
−35 f1 = 1960 MHz, f2 = 1962.5 MHz
350 mA
− 40
450 mA
−45 550 mA
700 mA
−50 1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%)
− 55
0 1 2 3 4 5 6 7 8 9 10 11 12
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 5. 2-Carrier N-CDMA IM3
versus Output Power
35
30
25
20
15
10
5
1900
VDD = 26 Vdc, IDQ = 550 mA 2.5 MHz Carrier Spacing
1.2288 MHz Source Channel Bandwidth
9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%)
IRL
η
IM3
Gps
ACPR
1930
1960 1990
0
− 10
− 20
− 30
− 40
− 50
− 60
2020
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
and Drain Efficiency versus Output Power
− 45
VDD = 26 Vdc
IDQ = 550 mA
−50 f1 = 1960 MHz, f2 = 1962.5 MHz
350 mA
− 55
− 60
− 65
− 70
0
450 mA
700 mA
550 mA
123
4
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%
Probability) (CCDF)
5 6 7 8 9 10 11 12
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 6. 2-Carrier N-CDMA ACPR
versus Output Power
15.5
700 mA
15.0 550 mA
450 mA
14.5 350 mA
14.0
13.5
0
VDD = 26 Vdc, IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF)
1 2 3 4 5 6 7 8 9 10 11 12
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 7. 2-Carrier N-CDMA Power Gain
versus Output Power
70 17
60
P1dB
Pout
16
P3dB
50 15
η
40 14
30 13
20 Gps 12
VDD = 26 Vdc
10 IDQ = 550 mA
f = 1960 MHz
0
11
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Pin, INPUT POWER (WATTS CW)
Figure 8. CW Output Power, Power Gain and Drain
Efficiency versus Input Power
MOTOROLA RF DEVICE DATA
MRF19045LR3 MRF19045LSR3
For More Information On This Product,
Go to: www.freescale.com
5
5 Page 
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
SEE NOTE 4
www.datasheet4u.com
2X K
N (LID)
ccc M T A M B M
E
G
1
3
2X Q
bbb M T B M A M
B
B
2
2X D
bbb M T A M B M
ccc M T A M B M
R (LID)
CF
aaa M T A M B M
M
(INSULATOR)
AA
T
SEATING
PLANE
S
(INSULATOR)
aaa M T A M B M
CASE 465E - 04
ISSUE E
NI - 400
MRF19045LR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .795 .805 20.19 20.44
B .380 .390 9.65 9.9
C .125 .163 3.17 4.14
D .275 .285 6.98 7.24
E .035 .045 0.89 1.14
F .004 .006 0.10 0.15
G .600 BSC
15.24 BSC
H .057 .067 1.45 1.7
K .092 .122 2.33 3.1
M .395 .405
10 10.3
N .395 .405
10 10.3
Q .120 .130 3.05 3.3
R .395 .405
10 10.3
S .395 .405
10 10.3
H aaa .005 BSC
0.127 BSC
bbb .010 BSC
0.254 BSC
ccc .015 BSC
0.381 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
2X D
bbb M T A M B M
1
2
2X K
ccc M T A M B M
E N (LID) C
A
A
T
SEATING
PLANE
(FLANGE)
M (INSULATOR)
aaa M T A M B M
R (LID)
ccc M T A M B M
F
3
H
S (INSULATOR)
aaa M T A M B M
B
(FLANGE)
B
CASE 465F - 04
ISSUE C
NI - 400S
MRF19045LSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .395 .405 10.03 10.29
B .395 .405 10.03 10.29
C .125 .163 3.18 4.14
D .275 .285 6.98 7.24
E .035 .045 0.89 1.14
F .004 .006 0.10 0.15
H .057 .067 1.45 1.70
K .092 .122 2.34 3.10
M .395 .405 10.03 10.29
N .395 .405 10.03 10.29
R .395 .405 10.03 10.29
S .395 .405 10.03 10.29
aaa .005 REF
0.127 REF
bbb .010 REF
0.254 REF
ccc .015 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MOTOROLA RF DEVICE DATA
MRF19045LR3 MRF19045LSR3
For More Information On This Product,
Go to: www.freescale.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF19045LR3.PDF ] | |
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