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C5686 PDF даташит

Спецификация C5686 изготовлена ​​​​«Panasonic» и имеет функцию, называемую «NPN Transistor - 2SC5686».

Детали детали

Номер произв C5686
Описание NPN Transistor - 2SC5686
Производители Panasonic
логотип Panasonic логотип 

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C5686 Даташит, Описание, Даташиты
Power Transistors
2SC5686
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
www.daFtaeshaetuetr4eus.com
High breakdown voltage: VCBO 2 000 V
High-speed switching: tf < 200 ns
Wide safe operation area
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
2 000
2 000
600
7
11
20
30
70
3.5
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
V
A
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
50 µA
VCB = 2 000 V, IE = 0
1 mA
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
50 µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 10 A
5 10
Collector-emitter saturation voltage
VCE(sat) IC = 10 A, IB = 2.5 A
3V
Base-emitter saturation voltage
VBE(sat) IC = 10 A, IB = 2.5 A
1.5 V
Transition frequency
fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3 MHz
Storage time
tstg IC = 10 A, Resistance loaded
3.0 µs
Fall time
tf IB1 = 2.5 A, IB2 = −5.0 A
0.2 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00303AED
1









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C5686 Даташит, Описание, Даташиты
2SC5686
Safe operation area
100
ICP t = 100 µs
10 IC
t=
DC t = 1 ms
10 ms
1
www.datasheet4u.com
101
102
Non repetitive pulse
103 TC = 25°C
1 10
100
1 000
Collector-emitter voltage VCE (V)
Safe operation area (Horizontal operation)
40
fH = 64 kHz, TC < 90°C
A.S.O for a single
35 pulse load caused by
EHT flash over during
horizontal operation.
30
25
20
15
10
5
0 < 1 mA
0 500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
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C5686 Даташит, Описание, Даташиты
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
www.data(1s)heAent4eux.cpoomrt permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP










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