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PDF 2708AF Data sheet ( Hoja de datos )
| Número de pieza | 2708AF | |
| Descripción | BU2708AF | |
| Fabricantes | NXP Semiconductors | |
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Hay una vista previa y un enlace de descarga de 2708AF (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2708AF
GENERAL DESCRIPTION
High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal
www.ddaetafslehecetito4nu.ccoimrcuits of colour television receivers. Features exceptional tolerance to base drive and collector current
load variations, resulting in a low worst-case dissipation. Designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 4 A; IB = 1.33 A
f = 16 kHz
ICsat = 4 A; f = 16 kHz
TYP.
-
-
-
-
-
-
4
4.8
MAX.
1700
825
8
15
45
1.0
-
5.5
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
VC Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 kΩ)
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
MIN. MAX. UNIT
- 10 kV
1 Turn-off current.
September 1997
1
Rev 1.200
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2708AF
120 PD%
www.datashee11t40u.com
100
Normalised Power Derating
with heatsink compound
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.13. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
Zth / K/W
10
BU2708AF/DF
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D
=
tp
T
D= 0
0.001
1.0E-06
T
1E-04
1E-02
tp / sec
t
1E+00
Fig.14. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.15. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH;
CFB = 1 - 4 nF; IB(end) = 0.8 - 4 A
IC / A
16
BU2708AF/DF
14
12 Area where
Fails occur
10
8
6
4
2
0
100
VCE / V
1000 1700
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
September 1997
5
Rev 1.200
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2708AF.PDF ] | |
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