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TIP150 PDF даташит

Спецификация TIP150 изготовлена ​​​​«SavantIC» и имеет функцию, называемую «(TIP150 - TIP152) SILICON POWER TRANSISTOR».

Детали детали

Номер произв TIP150
Описание (TIP150 - TIP152) SILICON POWER TRANSISTOR
Производители SavantIC
логотип SavantIC логотип 

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TIP150 Даташит, Описание, Даташиты
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
TIP150/151/152
DESCRIPTION
www.dat·aWshieteht4TuO.co-m220C package
·DARLINGTON
APPLICATIONS
·For use in automotive ignition,switching
and motor control applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
TIP150
VCBO
Collector-base voltage
TIP151
TIP152
TIP150
VCEO
Collector-emitter voltage TIP151
TIP152
VEBO
IC
ICM
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current-DC
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
300
350
400
300
350
400
8
7
10
1.5
80
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
1.56
UNIT
/W









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TIP150 Даташит, Описание, Даташиты
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
TIP150/151/152
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
TIP150
TIP151
TIP152
IC=10mA, IB=0
V(BR)CBO
Collector-base
breakdown voltage
TIP150
TIP151
TIP152
IC=1mA, IE=0
VCE(sat)-1 Collector-emitter saturation voltage IC=1A ,IB=10mA
VCE(sat)-2 Collector-emitter saturation voltage IC=2A ,IB=100mA
VCE(sat)-3 Collector-emitter saturation voltage IC=5A ,IB=250mA
VBE(sat)-1 Base-emitter saturation voltage
IC=2A ,IB=100mA
VBE (sat)-2 Base-emitter saturation voltage
IC=5A ,IB=250mA
TIP150 VCE=300V, IB=0
ICEO Collector cut-off current TIP151 VCE=350V, IB=0
TIP152 VCE=400V, IB=0
IEBO
hFE-1
hFE-2
hFE-3
Emitter cut-off current
DC current gain
DC current gain
DC current gain
VEB=8V; IC=0
IC=2.5A ; VCE=5V
IC=5A ; VCE=5V
IC=7A ; VCE=5V
VF Diode forward voltage
IF=7A
COB Output capacitance
Switching times
IE=0 ; VCB=10V;f=1MHz
td Delay time
tr Rise time
ts Storage time
tf Fall time
VCC=250V; IC=5A
IB1=-IB2=250mA
tp=20µs;Duty CycleC2.0%
MIN TYP. MAX UNIT
300
350 V
400
300
350 V
400
1.5 V
1.5 V
2.0 V
2.2 V
2.3 V
250 µA
15 mA
150
50
15
3.5 V
150 pF
0.03 µs
0.18 µs
3.5 µs
1.6 µs
2









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TIP150 Даташит, Описание, Даташиты
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
TIP150/151/152
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3










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