LM1875 PDF даташит
Спецификация LM1875 изготовлена «National Semiconductor» и имеет функцию, называемую «20W Audio Power Amplifier». |
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Детали детали
Номер произв | LM1875 |
Описание | 20W Audio Power Amplifier |
Производители | National Semiconductor |
логотип |
12 Pages
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February 1999
LM1875
20W Audio Power Amplifier
General Description
The LM1875 is a monolithic power amplifier offering very low
distortion and high quality performance for consumer audio
applications.
The LM1875 delivers 20 watts into a 4Ω or 8Ω load on ±25V
supplies. Using an 8Ω load and ±30V supplies, over 30
watts of power may be delivered. The amplifier is designed
to operate with a minimum of external components. Device
overload protection consists of both internal current limit and
thermal shutdown.
The LM1875 design takes advantage of advanced circuit
techniques and processing to achieve extremely low distor-
tion levels even at high output power levels. Other outstand-
ing features include high gain, fast slew rate and a wide
power bandwidth, large output voltage swing, high current
capability, and a very wide supply range. The amplifier is in-
ternally compensated and stable for gains of 10 or greater.
Features
n Up to 30 watts output power
n AVO typically 90 dB
n Low distortion: 0.015%, 1 kHz, 20 W
n Wide power bandwidth: 70 kHz
n Protection for AC and DC short circuits to ground
n Thermal protection with parole circuit
n High current capability: 4A
n Wide supply range 16V-60V
n Internal output protection diodes
n 94 dB ripple rejection
n Plastic power package TO-220
Applications
n High performance audio systems
n Bridge amplifiers
n Stereo phonographs
n Servo amplifiers
n Instrument systems
Connection Diagram
Typical Applications
Front View
DS005030-1
Package
For Straight Leads
For Stagger Bend
For 90˚ Stagger Bend
For 90˚ Stagger Bend
Ordering Info
LM1875T
SL108949
LM1875T
LB03
LM1875T
LB05
LM1875T
LB02
NSC Package
Number
T05A
T05D
T05E
TA05B
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© 1999 National Semiconductor Corporation DS005030
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Absolute Maximum Ratings (Note 1)
Supply Voltage
Input Voltage
Storage Temperature
Junction Temperature
60V
−VEE to VCC
−65˚C to + 150˚C
150˚C
Lead Temperature
(Soldering, 10 seconds)
θJC
θJA
260˚C
3˚C
73˚C
Electrical Characteristics
VCC=+25V, −VEE=−25V, TAMBIENT=25˚C, RL=8Ω, AV=20 (26 dB), fo=1 kHz, unless otherwise specified.
Parameter
Conditions
Typical
Tested Limits
Units
Supply Current
Output Power (Note 2)
POUT=0W
THD=1%
70 100 mA
25 W
THD (Note 2)
Offset Voltage
POUT=20W, fo=1 kHz
0.015
%
POUT=20W, fo=20 kHz
0.05 0.4 %
POUT=20W, RL=4Ω, fo=1 kHz
0.022
%
POUT=20W, RL=4Ω, fo=20 kHz
0.07
0.6
%
±1 ±15 mV
Input Bias Current
±0.2 ±2 µA
Input Offset Current
0
±0.5
µA
Gain-Bandwidth Product
Open Loop Gain
fo=20 kHz
DC
5.5
90
MHz
dB
PSRR
Max Slew Rate
VCC, 1 kHz, 1 Vrms
VEE, 1 kHz, 1 Vrms
20W, 8Ω, 70 kHz BW
95 52 dB
83 52 dB
8 V/µs
Current Limit
Equivalent Input Noise Voltage
VOUT = VSUPPLY −10V
RS=600Ω, CCIR
4 3A
3 µVrms
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: Assumes the use of a heat sink having a thermal resistance of 1˚C/W and no insulator with an ambient temperature of 25˚C. Because the output limiting
circuitry has a negative temperature coefficient, the maximum output power delivered to a 4Ω load may be slightly reduced when the tab temperature exceeds 55˚C.
Typical Applications
Typical Single Supply Operation
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Typical Performance Characteristics
THD vs Power Output
THD vs Frequency
Power Output vs Supply
Voltage
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Supply Current vs Supply
Voltage
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PSRR vs Frequency
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Device Dissipation vs
Ambient Temperature†
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Power Dissipation vs
Power Output
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Power Dissipation vs
Power Output
†φINTERFACE = 1˚C/W.
See Application Hints.
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IOUT vs VOUT-Current Limit/
Safe Operating Area Boundary
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