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PDF S-AV34 Data sheet ( Hoja de datos )

Número de pieza S-AV34
Descripción RF POWER AMPLIFIER MODULE RF POWER AMPLIFIER MODULE
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! S-AV34 Hoja de datos, Descripción, Manual

TOSHIBA RF POWER AMPLIFIER MODULE
S-AV34
S-AV34
RF POWER AMPLIFIER MODULE for VHF BAND
www.da·tafsoheredt4iug.citoaml use
ABSOLUTE MAXIMUM RATINGS (Tc = 25, ZG = ZL = 50Ω)
CHARACTERISTIC
SYMBOL
TEST CONDITION
RATING UNIT
DC Supply Voltage
VDD VGG =0V, Pi =0mW
20 V
DC Supply Voltage
VGG VDD10.8V, Pi =0mW
8V
Input Power
Pi VDD10.8V
20 dBmW
Junction Temperature
Tj MAX
150
Storage Temperature Range
Tstg
-40~110
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Caution: This absolute maximum rating given in a sheet guarantees each item independently. When two items
or more of maximum rated items joins a device at once. It becomes the outside of a guarantee.
Please design in circuit to make it always operate within this regulation also on the worst condition.
PACKAGE OUTLINE
Unit in mm
① ②③④
RF Input VGG VDD
RF Output GROUND(FRANGE)
JEDEC
JEITA
TOSHIBA
Weight: 11.8g
5-32F
1
2007-11-01

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