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AP02N90I PDF даташит

Спецификация AP02N90I изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP02N90I
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP02N90I Даташит, Описание, Даташиты
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Advanced Power
Electronics Corp.
AP02N90I
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Isolation Full Package
Fast Switching Characteristics
RoHS compliant
Description
G
D
S
The TO-220CFM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
BVDSS
RDS(ON)
ID
900V
7.2
1.9A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Rating
900
±30
1.9
1.2
6
34.7
0.28
36
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Max.
Max.
Value
3.6
62
Units
/W
/W
200418062-1/4









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AP02N90I Даташит, Описание, Даташиты
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
VDSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25 , ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=0.85A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=1.9A
VDS=900V, VGS=0V
VDS=720V, VGS=0V
VGS=±30V
ID=1.9A
VDS=540V
VGS=10V
VDD=450V
ID=1.9A
RG=10 VGS=10V
RD=236
VGS=0V
VDS=25V
f=1.0MHz
900 - - V
- 0.8 - V/
- - 7.2
2 - 4V
-2-S
- - 10 uA
- - 100 uA
- - ±100 nA
- 12 20 nC
- 2.5 - nC
- 4.7 - nC
- 10 - ns
-5
- ns
- 18 - ns
- 9 - ns
- 630 1000 pF
- 40 - pF
- 4 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.9A, VGS=0V
IS=1.9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 360 - ns
- 1.8 - µC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=20mH , RG=25
3.Pulse width <300us , duty cycle <2%.
, IAS=1.9A.
2/4









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AP02N90I Даташит, Описание, Даташиты
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2.0
T C =25 o C
1.6
1.2
10V
8.0V
6.0V
5.0V
0.8
V G =4.5V
0.4
0.0
0 3 6 9 12 15 18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
-50 0 50 100
Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
2.0
1.5
T j =150 o C
1.0
T j =25 o C
0.5
0.0
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP02N90I
1.25
T C =150 o C
1.00
0.75
10V
8.0V
6.0V
5.0V
V G =4.5V
0.50
0.25
0.00
0
3 6 9 12 15
V DS , Drain-to-Source Voltage (V)
18
Fig 2. Typical Output Characteristics
2.8
2.4
I D = 0.85 A
V G =10V
2.0
1.6
1.2
0.8
0.4
0.0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
-50 0 50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4










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