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PDF AP02N60P Data sheet ( Hoja de datos )
| Número de pieza | AP02N60P | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP02N60P (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP02N60P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
▼ RoHS Compliant
G
DS
TO-220
Description
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,DC-AC
converters for telecom, industrial and consumer environment.
BVDSS
RDS(ON)
ID
600V
8Ω
2A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Rating
600
±20
2
1.26
6
39
0.31
130
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Max.
Max.
Value
3.2
62
Units
℃/W
℃/W
200721052-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP02N60P.PDF ] | |
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