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PDF STB21NM60ND Data sheet ( Hoja de datos )
| Número de pieza | STB21NM60ND | |
| Descripción | N-channel MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB21NM60ND, STF21NM60ND,
STP21NM60ND, STW21NM60ND
N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
TAB
3
1
D2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
' ĆRUĆ7$%
Features
Order codes
STB21NM60ND
STF21NM60ND
STP21NM60ND
STW21NM60ND
VDSS @
TJmax
650 V
650 V
650 V
650 V
RDS(on)
max
0.22 Ω
0.22 Ω
0.22 Ω
0.22 Ω
ID
17 A
17 A
17 A
17 A
• Intrinsic fast-recovery body diode
• Worldwide best RDS(on)*area amongst the fast
recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
* • Switching applications
Description
6 These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
$0Y
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB21NM60ND
STF21NM60ND
STP21NM60ND
STW21NM60ND
Table 1. Device summary
Marking
Package
21NM60ND
21NM60ND
21NM60ND
21NM60ND
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
March 2013
This is information on a product in full production.
DocID13781 Rev 5
1/21
www.st.com
21
1 page  
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, VGS = 0
ISD = 17 A, VDD = 60 V
di/dt=100 A/μs
(see Figure 20)
ISD = 17 A,VDD = 60 V
di/dt=100 A/μs,
TJ = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
17
68
1.6
150
0.90
13
A
A
V
ns
μC
A
210 ns
1.6 μC
15 A
DocID13781 Rev 5
5/21
5 Page 
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
Package mechanical data
Figure 24. D²PAK (TO-263) drawing
Figure 25. D²PAK footprint(a)
16.90
0079457_T
12.20
1.60
5.08
9.75
3.50
a. All dimensions are in millimeters
DocID13781 Rev 5
Footprint
11/21
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| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet STB21NM60ND.PDF ] | |
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