DataSheet26.com

2SK215 PDF даташит

Спецификация 2SK215 изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «(2SK213 - 2SK216) Silicon N Channel MOS FET».

Детали детали

Номер произв 2SK215
Описание (2SK213 - 2SK216) Silicon N Channel MOS FET
Производители Renesas Technology
логотип Renesas Technology логотип 

6 Pages
scroll

No Preview Available !

2SK215 Даташит, Описание, Даташиты
2SK213, 2SK214, 2SK215, 2SK216
Silicon N Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching.
Complementary pair with 2SJ76, J77, J78, J79
www.DataSheet4U.com
Features
Suitable for direct mounting
High forward transfer admittance
Excellent frequency response
Enhancement-mode
REJ03G0903-0200
(Previous: ADE-208-1241)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
D
123
S
1. Gate
2. Source
(Flange)
3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5









No Preview Available !

2SK215 Даташит, Описание, Даташиты
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings
Item
Drain to source voltage 2SK213
2SK214
2SK215
2SK216
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
www.DataSheetC4Uha.cnonmel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VDSX
VGSS
ID
IDR
Pch
Pch*1
Tch
Tstg
Ratings
140
160
180
200
±15
500
500
1.75
30
150
–45 to +150
(Ta = 25°C)
Unit
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown 2SK213
voltage
2SK214
2SK215
2SK216
Gate to source breakdown voltage
Gate to source voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Note: 2. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V(BR)DSX
140
160
V ID = 1 mA, VGS = –2 V
V
180 —
V
200 —
V
V(BR)GSS
±15
V IG = ±10 µA, VDS = 0
VGS(on)
0.2
1.5
V ID = 10 mA, VDS = 10 V *2
VDS(sat)
— 2.0
V ID = 10 mA, VGD = 0 *2
|yfs| 20 40 — mS ID = 10 mA, VDS = 20 V *2
Ciss
— 90 — pF ID = 10 mA, VDS = 10 V,
Crss
— 2.2 — pF f = 1 MHz
Rev.2.00 Sep 07, 2005 page 2 of 5









No Preview Available !

2SK215 Даташит, Описание, Даташиты
2SK213, 2SK214, 2SK215, 2SK216
Main Characteristics
Power vs. Temperature Derating
60
40
www.DataSheet4U.com
20
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
50
TC = 25°C
0.8
40 0.7
30 0.6
20 0.5
0.4
10 0.3
0.2
VGS = 0.1 V
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 20 V
80
60
40
20
0 0.4 0.8 1.2 1.6 2.0
Gate Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
Typical Output Characteristics
500 3.5
400
TC = 25°C
3.0
2.5
300
2.0
200
1.5
100
1.0
VGS = 0.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
500
VDS = 20 V
400
300
200
100
0 12345
Gate Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
200
100
50
20
10
TC = 25°C
5 VDS = 20 V
2 5 10 20 50 100 200
Drain Current ID (mA)










Скачать PDF:

[ 2SK215.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2SK210N CHANNEL JUNCTION TYPE (FM TUNER/ VHF BAND AMPLIFIER APPLICATIONS)Toshiba Semiconductor
Toshiba Semiconductor
2SK2100-01MRPower MOSFET ( Transistor )Fuji Electric
Fuji Electric
2SK2101-01MRN-channel MOS-FETFuji Electric
Fuji Electric
2SK2103Small switching (30V/ 2A)ROHM Semiconductor
ROHM Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск