DataSheet26.com

MRF6V10250HSR3 PDF даташит

Спецификация MRF6V10250HSR3 изготовлена ​​​​«Freescale Semiconductor» и имеет функцию, называемую «RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET».

Детали детали

Номер произв MRF6V10250HSR3
Описание RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Производители Freescale Semiconductor
логотип Freescale Semiconductor логотип 

10 Pages
scroll

No Preview Available !

MRF6V10250HSR3 Даташит, Описание, Даташиты
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies
between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for
use in pulsed applications.
DTPyouputtyic=aCl2yP5c0luelsW=ead1t0tPs%ePrfeoarkm, afn=ce1:0V90DDM=Hz5,0PVuolsltes,WIDiQdth=
250 mA,
= 100 μsec,
Power Gain — 21 dB
Drain Efficiency — 60%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak
Power
Features
www.DataSheet4U.coCmharacterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6V10250HS
Rev. 0, 2/2008
MRF6V10250HSR3
1090 MHz, 250 W, 50 V
PULSED
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465A - 06, STYLE 1
NI - 780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +100
- 6.0, +10
- 65 to +150
150
200
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 250 W Pulsed, 100 μsec Pulse Width, 10% Duty Cycle
RθJC
0.10
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
1









No Preview Available !

MRF6V10250HSR3 Даташит, Описание, Даташиты
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 mA)
Zero Gate Voltage Drain Leakage Current
www.DataSheet4(UV.DcSom= 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 90 Vdc, VGS = 0 Vdc)
IGSS
— 500 nAdc
V(BR)DSS
100
— Vdc
IDSS
50 μAdc
IDSS
2 mA
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 528 μAdc)
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 250 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.32 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
VGS(th)
1
1.8
3 Vdc
VGS(Q)
2
2.4
3 Vdc
VDS(on)
0.25
Vdc
Crss — 0.8 —
Coss — 340 —
Ciss — 280 —
pF
pF
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 250 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz,
Pulsed, 100 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps 19 21 23 dB
Drain Efficiency
ηD 55 60 — %
Input Return Loss
IRL - 12 - 9 dB
1. Part internally matched both on input and output.
MRF6V10250HSR3
2
RF Device Data
Freescale Semiconductor









No Preview Available !

MRF6V10250HSR3 Даташит, Описание, Даташиты
VBIAS
R2 C7 L1
C6
RF
INPUT Z1
Z2 Z3
C1
C2
C3
VSUPPLY
++
C12 C15 C13 C14
L2
RF
R1
Z6 Z7
Z8 Z9
OUTPUT
Z10
Z4 Z5
C8 C9
C10
C11
C4 C5
DUT
www.DataSheet4U.com
Z1
Z2*, Z9*
Z3*, Z8*
Z4, Z7
0.40x 0.080Microstrip
1.29x 0.080Microstrip
0.22x 0.480Microstrip
0.22x 0.625x 0.220Taper
Z5, Z6
Z10
PCB
0.625x 0.300Microstrip
0.430x 0.080Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, εr = 2.55
* Line length includes microstrip bends
Figure 1. MRF6V10250HSR3 Test Circuit Schematic
Table 5. MRF6V10250HSR3 Test Circuit Component Designations and Values
Part
Description
Part Number
C1 240 pF Chip Capacitor
ATC100B241JT500XT
C2, C9, C11
1.8 pF Chip Capacitors
ATC100B1R8CT500XT
C3 3.3 pF Chip Capacitor
ATC100B3R3CT500XT
C4, C5
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
C6, C10, C12
39 pF Chip Capacitors
ATC100B390JT500XT
C7, C15
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
C8 4.7 pF Chip Capacitor
ATC100B4R7CT500XT
C13, C14
470 μF, 63 V Electrolytic Capacitors
EKME633ELL471MK25S
L1 5 nH, 2 Turn Inductor
A02TKLC
L2 7 nH, Hand Wound
2T, 18awg
R1 10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
R2 20 Ω, 1 W Chip Resistor
CRCW251220R0FKEA
Manufacturer
ATC
ATC
ATC
ATC
ATC
Kemet
ATC
Multicomp
Coilcraft
Freescale
Vishay
Vishay
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
3










Скачать PDF:

[ MRF6V10250HSR3.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
MRF6V10250HSR3RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETFreescale Semiconductor
Freescale Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск