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SDT181GKxx PDF даташит

Спецификация SDT181GKxx изготовлена ​​​​«Sirectifier Semiconductors» и имеет функцию, называемую «Thyristor-Diode Modules».

Детали детали

Номер произв SDT181GKxx
Описание Thyristor-Diode Modules
Производители Sirectifier Semiconductors
логотип Sirectifier Semiconductors логотип 

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SDT181GKxx Даташит, Описание, Даташиты
www.DataSheet4U.com
STD/SDT181
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
VRSM
VDSM
V
STD/SDT181GK08 900
STD/SDT181GK12 1300
STD/SDT181GK14 1500
STD/SDT181GK16 1700
STD/SDT181GK18 1900
VRRM
VDRM
V
800
1200
1400
1600
1800
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , ITRMS FRMS TVJ=TVJM
I , ITAVM FAVM TC=85oC; 180o sine
TVJ=45oC
ITSM, IFSM
VR=0
TVJ=TVJM
VR=0
TVJ=45oC
i2dt
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.5A
diG/dt=0.5A/us
repetitive, IT=500A
non repetitive, IT=500A
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=500us
PGAV
VRGM
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M6)
Terminal connection torque (M6)
Weight Typical including screws
Maximum Ratings
300
181
6000
6400
5250
5600
180000
170000
137000
128000
150
500
1000
120
60
8
10
-40...+125
125
-40...+125
3000
3600
2.25-2.75/20-25
4.5-5.5/40-48
125
Unit
A
A
A2s
A/us
V/us
W
W
V
oC
V~
Nm/lb.in.
g









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SDT181GKxx Даташит, Описание, Даташиты
STD/SDT181
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VT, VF IT, IF=300A; TVJ=25oC
VTO For power-loss calculations only (TVJ=125oC)
rT
www.DataSheetV4UGT.com VD=6V;
IGT VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD
IL
TVJ=25oC; tp=30us; VD=6V
IG=0.5A; diG/dt=0.5A/us
IH TVJ=25oC; VD=6V; RGK=
tgd
TVJ=25oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
tq
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
IRM
per thyristor/diode; DC current
RthJC per module
per thyristor/diode; DC current
RthJK per module
dS Creeping distance on surface
dA Strike distance through air
a Maximum allowable acceleration
Characteristic Values
10
1.25
0.88
1.15
2.5
2.6
150
200
0.2
10
Unit
mA
V
V
m
V
mA
V
mA
300 mA
200 mA
2 us
typ. 150 us
550
235
0.155
0.0775
0.225
0.1125
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits









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SDT181GKxx Даташит, Описание, Даташиты
STD/SDT181
Thyristor-Diode Modules, Diode-Thyristor Modules
www.DataSheet4U.com
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT181
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time










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Номер в каталогеОписаниеПроизводители
SDT181GKxxThyristor-Diode ModulesSirectifier Semiconductors
Sirectifier Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

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