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4511GD PDF даташит

Спецификация 4511GD изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «AP4511GD».

Детали детали

Номер произв 4511GD
Описание AP4511GD
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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4511GD Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
Low Gate Charge
Fast Switching Speed
www.DataSheet4U.PcoDmIP-8 Package
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP4511GD
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
35V
25mΩ
7A
-35V
40mΩ
-6.1A
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
35 -35
±20 ±20
7 -6.1
5.7 -5
30 -30
2.0
0.016
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200805262









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4511GD Даташит, Описание, Даташиты
AP4511GD
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
www.DataSheet4U.com
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=7A
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=35V, VGS=0V
VDS=28V, VGS=0V
VGS=±20V
ID=7A
VDS=28V
VGS=4.5V
VDS=18V
ID=1A
RG=3.3Ω,VGS=10V
RD=18Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
35 -
-V
- 0.02 - V/
- 20 25 mΩ
- 30 37 mΩ
1 - 3V
-9-S
- - 1 uA
- - 25 uA
- - ±100 nA
- 11 18 nC
- 3 - nC
- 6 - nC
- 12 - ns
- 7 - ns
- 22 - ns
- 6 - ns
- 830 1330 pF
- 150 - pF
- 110 - pF
- 1.2 1.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=7A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 18 - ns
- 12 - nC
2









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4511GD Даташит, Описание, Даташиты
AP4511GD
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
www.DataSheet4U.com
VGS(th)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance2
Gate Threshold Voltage
VGS=0V, ID=-250uA
Reference to 25,ID=-1mA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
VDS=VGS, ID=-250uA
-35 -
- -0.02
- 35
- 53
-1 -
-
-
40
60
-3
V
V/
mΩ
mΩ
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
IDSS
Drain-Source Leakage Current
VDS=-35V, VGS=0V
Drain-Source Leakage Current (Tj=70oC)
VDS=-28V, VGS=0V
IGSS Gate-Source Leakage
VGS=±20V
Qg Total Gate Charge2
ID=-6A
-9-S
- - -1 uA
- - -25 uA
- - ±100 nA
- 10 16 nC
Qgs Gate-Source Charge
VDS=-28V
- 2 - nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-18V
- 6 - nC
- 10 - ns
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
ID=-1A
RG=3.3Ω,VGS=-10V
RD=18Ω
- 6 - ns
- 26 - ns
- 7 - ns
Ciss Input Capacitance
VGS=0V
- 690 1100 pF
Coss Output Capacitance
VDS=-25V
- 165 - pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg Gate Resistance
f=1.0MHz
- 130 - pF
- 5.2 7.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-6A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 20 - ns
- 12 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 90/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3










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Номер в каталогеОписаниеПроизводители
4511GDAP4511GDAdvanced Power Electronics
Advanced Power Electronics
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