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06N03 PDF даташит

Спецификация 06N03 изготовлена ​​​​«Pan Jit International» и имеет функцию, называемую «25V N-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв 06N03
Описание 25V N-Channel Enhancement Mode MOSFET
Производители Pan Jit International
логотип Pan Jit International логотип 

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06N03 Даташит, Описание, Даташиты
PJD06N03
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=6m
• RDS(ON), VGS@4.5V,IDS@30A=9m
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
www.DataSheet4US.cpoemcially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 06N03
TO-252
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
Avalanche Energy with Single Pulse
ID=27A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
TA =25OC
TA =75OC
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
VDS
VGS
ID
ID M
PD
T ,T
J STG
EAS
RθJ C
RθJ A
Limit
25
+20
60
280
62.5
37.5
-55 to + 150
180
2.0
50
Uni ts
V
V
A
A
W
OC
mJ
O C /W
O C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUL.19.2006
PAGE . 1









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06N03 Даташит, Описание, Даташиты
PJD06N03
ELECTRICALCHARACTERISTICS
Static
Parameter
S ym b o l
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS (th)
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Drain-Source On-State Resistance
RD S (o n)
Drain-Source On-State Resistance
RD S (o n)
Zero Gate Voltage Drain Current
ID S S
Gate Body Leakage
IG S S
Forward Transconductance
gfS
Dynamic
To ta l Ga te C ha r g e
Qg
Te s t C o nd i ti o n
V G S =0 V, ID =2 5 0 uA
V D S =V G S , ID =2 5 0 uA
VGS =4.5V, ID =30A
VGS =10V, ID =30A
VD S =25V, VGS =0V
VGS =+20V, VD S =0V
V D S =1 0 V, ID =1 5 A
V =15V,I =15A,V =5V
DS D
GS
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Input C apaci tance
Output Capacitance
Re ve rs e Tra ns fe r C a p a c i ta nc e
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Qg s
Qg d
Td (o n)
trr
td (o ff)
tf
C
iss
Coss
Crss
Is
VSD
V D S =1 5 V, ID =1 5 A
V G S =10V
VD D =15V , RL=15
ID =1A , VGE N=10V
RG =3.6
VD S =15V, VGS =0V
f=1.0MHZ
-
IS =3 0 A , V G S =0 V
Mi n.
25
1
-
-
-
-
30
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ .
-
-
7.5
5.0
-
-
-
21.8
38.2
4.8
9.5
11.5
11.0
43
17.5
1750
480
310
-
0.9
Switching
Test Circuit
VIN
RG
VDD Gate Charge
Test Circuit
RL VGS
VOUT
1mA
RG
M a x.
Uni ts
-
3
9.0
6.0
1
+100
-
V
V
m
uA
nA
S
-
-
nC
-
-
16
18
ns
60
25
-
- pF
-
60 A
1.2 V
VDD
RL
STAD-JUL.19.2006
PAGE . 2









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06N03 Даташит, Описание, Даташиты
PJD06N03
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
100
80
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60
40
20
0
0
VGS=10V, 6.0V, 5.0V, 4.5V, 4.0V
3.5V
3.0V
2.5V
1234
VDS - Drain-to-Source Voltage (V)
5
Fig. 1F-TIYGP.1IC-ALOFuOtpRuWtARCDhCaHraAcRteArCisTtEicRISTIC
80
VDS=10V
60
40
20
0
1.5
TJ=125OC
TJ=25OC
TJ=-55OC
2 2.5 3 3.5 4
VGS - Gate-to-Source Voltage (V)
4.5
FIG.2- Transfer Characteristic
15
12
9 VGS=4.5V
6
VGS=10V
3
0
0 10 20 30 40 50 60 70 80 90
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
1.4
VGS=10V
1.3 ID=30A
1.2
1.1
1
0.9
0.8
0.7
-50
-25 0 25 50 75 100 125
TJ - Junction Tem perature (oC)
150
FIG.5- On Resistance vs Junction Temperature
STAD-JUL.19.2006
30
ID=30A
25
20
15
10 TJ=125OC
5
TJ=25OC
0
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
FIG.4- On Resistance vs Gate to Source Voltage
PAGE . 3










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