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STK7002B PDF даташит

Спецификация STK7002B изготовлена ​​​​«AUK» и имеет функцию, называемую «N-Channel Enhancement-Mode MOSFET».

Детали детали

Номер произв STK7002B
Описание N-Channel Enhancement-Mode MOSFET
Производители AUK
логотип AUK логотип 

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STK7002B Даташит, Описание, Даташиты
Semiconductor
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage: BVDSS=60V(Min.)
Low Crss : Crss=3.1pF(Typ.)
Low gate charge : Qg=2.8nC(Typ.)
www.DataSheetL4Uo.wcomRDS(on) :RDS(on)=2.8Ω(Typ.)
Ordering Information
Type NO.
Marking
STK7002B
72B
Outline Dimensions
STK7002B
N-Channel Enhancement-Mode MOSFET
Package Code
SOT-23
unit : mm
1
3
2
KSD-T5C042-000
PIN Connections
1. Gate
2. Source
3. Drain
1









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STK7002B Даташит, Описание, Даташиты
STK7002B
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed) *
www.DataSheDert4aUin.coPmower dissipation **
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
** Device mounted on 99.5% Alumina 10 x 8 x 0.6mm
Characteristic
Thermal
resistance
Junction-ambient
Symbol
VDSS
VGSS
(Tc=25)
ID (Tc=100)
IDP
PD
IAS
EAS
IAR
EAR
TJ
Tstg
Symbol
Rth(J-a)
Rating
60
±20
380
240
1.52
350
380
3.8
380
0.1
150
-55~150
Typ.
-
Max
357
(Ta=25°C)
Unit
V
V
mA
mA
A
mW
mA
mJ
mA
mJ
°C
Unit
/W
KSD-T5C042-000
2









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STK7002B Даташит, Описание, Даташиты
STK7002B
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
www.DataSheFeot4rwU.acordm transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
RDS(ON)
gfs
Ciss
Coss
ID=10μA, VGS=0
ID=250μA, VDS= VGS
VDS=60V, VGS=0V
VDS=0V, VGS=±20V
VGS=5V, ID=50mA
VGS=10V, ID=180mA
VDS=3V, ID=180mA
VGS=0V, VDS=25V, f=1MHz
Crss
td(on)
td(off)
Qg
Qgs
Qgd
VDD=30V, VGS=10V
ID=380mA, RG=25
VDD=30V, VGS=10V
ID=380mA
Min.
60
1.0
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.8
2.7
353
20
7.8
3.1
(Ta=25°C)
Max. Unit
-V
2.5 V
1 μA
±100 nA
4.2
Ω
4.0
mS
30
11.7 pF
4.7
7 10.5
ns
11 16.5
2.8 4.2
0.4 0.6 nC
0.2 0.3
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
Continuous source current
Source current (Pulsed)
IS Integral reverse diode
ISM in the MOSFET
Forward voltage
VSD VGS=0V, IS=0.38A
Reverse recovery time
Reverse recovery charge
trr Is=380mA, VGS=0V
Qrr dIs/dt=10A/us
Note ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=10mH, IAS=0.38A, VDD=20V, RG=25
Pulse Test : Pulse Width300us, Duty cycle2%
Essentially independent of operating temperature
Min
-
-
-
-
-
Typ
-
-
-
39
10
(Ta=25°C)
Max Unit
380
1520
mA
1.4 V
- ns
- uC
KSD-T5C042-000
3










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