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LD1003S PDF даташит

Спецификация LD1003S изготовлена ​​​​«Lovoltech» и имеет функцию, называемую «High Performance N-Channel POWERJFET».

Детали детали

Номер произв LD1003S
Описание High Performance N-Channel POWERJFET
Производители Lovoltech
логотип Lovoltech логотип 

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LD1003S Даташит, Описание, Даташиты
PWRLITE LD1003S
High Performance N-Channel POWERJFETTM with Schottky Diode
Features
™ Trench Power JFET with low threshold voltage Vth.
™ Device fully “ON” with Vgs = 0.7V
™ Optimum for “Low Side” Buck Converters
™ Optimized for Secondary Rectification in isolated DC-DC
™ Low Rg and low Cds for high speed switching
www.DataSheet4™U.cNoom“Body Diode”; extremely low Cds
™ Added Fast Recovery Schottky Diode in same package
Applications
™ DC-DC Converters
™ Synchronous Rectifiers
™ PC Motherboard Converters
™ Step-down power supplies
™ Brick Modules
™ VRM Modules
DPAK Pin Assignments
4
2
13
Case TO252
DPAK (LD1003S)
(Surface Mount)
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
D
G
S
N – Channel JFET
And Schottky Diode
Pin Definitions
Pin Number Pin Name Pin Function Description
1 Gate Gate. Transistor Gate
2, 4 Drain Drain. Transistor Drain
3 Source Source. Transistor Source
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(VDD= 5VDC, IL=60APK, L=0.3mH, RG=100 Ω)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C)
VDS (V)
24V
Symbol
VDS
VGS
VGD
ID
ID
EAS
TJ
TSTG
T
PD
Product Summary
Rdson ()
0.0045
ID (A)
50
Ratings
24
-10
-28
50
100
220
Units
V
V
V
A
A
mJ
-55 to 150°C
-65 to 150°C
260°C
80
°C
°C
°C
W
LD1003S.Rev 0.93 PR 12-04









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LD1003S Даташит, Описание, Даташиты
Thermal Resistance
Symbol
Parameter
RΘJA
RΘJC
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
DPAK
Ratings
80
1.6
Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The φ denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
www.DataSheet4U.com
BVDSX
BVGDO
Static
Breakdown Voltage
Drain to Source
Breakdown Voltage
Gate to Drain
ID = 0.5 mA
VGS= -4 V
IG = -50µA
24
BVGSO
RDS(ON)
Breakdown Voltage
Gate to Source
Static Drain to Source1 On
Resistance (Current flows
drain-to-source) See Fig. 1
IG = -1 mA
IG = 40 mA, ID=10A
IG = 10 mA, ID=10A
IG = 5 mA, ID=10A
VGS(TH) Gate Threshold Voltage
VDS=0.1 V, ID=250µA
-1200
Dynamic
QG Total Gate Charge
QGD Gate to Drain Charge
QGS Gate to Source Charge
QSW Switching Charge
RG Gate Resistance
VDrive =5V, ID=10A,VDS=15V
TD(ON)
TR
TD(OFF)
TF
CISS
COSS
CGS
CGD
CDS
Turn-on Delay Time
Rise Time
Turn-off Delay
Fall Time
Input Capacitance
Output Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
Drain-Source Capacitance
VDD=16V, ID=15A
VDrive = 5 V
Clamped Inductive Load
VDS=10V, VGS= -5 V, 1MHz.
Typ.
-12
3.0
3.5
3.6
-800
23
14
1.8
15
0.5
5
12
2
10
3200
900
2250
750
150
Schottky Diode
IR Reverse Leakage
VF Forward Voltage
VF Forward Voltage
VF Forward Voltage
Qrr Reverse Recovery Charge
Notes:
1. Pulse width <= 500µs, duty cycle < = 2%
VR=20V, Vgs = -4V
IF = 1 A
IF = 10 A
IF = 20 A
Is = 20 A di/dt = 100A/us,
0.25
300
700
900
8
Units
°C/W
°C/W
Max.
-28
-10
4.0
5.5
-600
Units
V
V
V
m
m
mV
nC
nC
nC
nC
ns
pF
0.3 mA
mV
mV
mV
nC
2
LD1003S
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification









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LD1003S Даташит, Описание, Даташиты
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
RDS(ID=-10A) vs IG, at Room Temperature.
0.0056
0.0054
0.0052
0.0050
0.0048
0.0046
0.0044
0.0042
0.0040
0.0038
www.DataSheet4U0.c.0o0m36
0.0034
0.0032
0.0030
0.001
0.010
IG(A)
0.100
1.000
Figure 1 – RDSON vs Gate Current at ID – 10A
BVgs plot: Id vs Vds for Vgs=-4V
1.40E-03
1.20E-03
1.00E-03
8.00E-04
6.00E-04
4.00E-04
2.00E-04
0.00E+00
0
5 10 15 20 25
Vds(V)
Figure 3 – Breakdown Voltage Vds vs Id
30
1.E-01
9.E-02
8.E-02
7.E-02
6.E-02
5.E-02
4.E-02
3.E-02
2.E-02
1.E-02
0.E+00
0.0
IG vs VGS, Source and Draiinn GGrroouunnddeedd..
At Room Temperaattuurree
0.1 0.2 0.3 0.44 00..55 00..66 00..77
V G SS((VV))
00..88
Figure 5 – IG vs Gate Voltage VGS
Total Gate Charge curves
2
1 Capacitive
Charges
0 Region
-1
-2
-3
-4
-5
0 10
DC Charges Region
20 30 40 50
QtotG(nC)
Figure 2 – Total Gate Charge
3500
3000
2500
2000
1500
1000
500
0
0
Capacitance vs VDS, VGS=-4V
at Room Temp
5 10 15 20 25
VDSV)
Ciss
Coss
Crss
Figure 4 – Capacitance vs Drain Voltage Vds
5.0E-04
3.0E-04
1.0E-04
-1.0E-04
-3.0E-04
-5.0E-04
-7.0E-04
-9.0E-04
-1.1E-03
-1.3E-03
-14
IG vs VGS, Drain Open
Room Temp
-12 -10
-8 -6 -4
VGSV)
-2
0
Figure 6 – Typical Gate Voltage
Characteristic
2
LD1003S
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
3
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification










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Номер в каталогеОписаниеПроизводители
LD1003SHigh Performance N-Channel POWERJFETLovoltech
Lovoltech

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