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MRF3010 PDF даташит

Спецификация MRF3010 изготовлена ​​​​«Motorola Semiconductors» и имеет функцию, называемую «LATERAL N-CHANNEL BROADBAND RF POWER MOSFET».

Детали детали

Номер произв MRF3010
Описание LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
Производители Motorola Semiconductors
логотип Motorola Semiconductors логотип 

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MRF3010 Даташит, Описание, Даташиты
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistor
N–Channel Enhancement–Mode Lateral
MOSFET
Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
CW amplifier applications.
Guaranteed Performance @ 1.6 GHz, 28 Volts
D
Output Power = 10 Watts
Minimum Gain = 9.5 dB @ 10 Watts
Minimum Efficiency = 45% @ 10 Watts
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High Gain, Rugged Device
Bottom Side Source Eliminates DC Isolators,
Reducing Common Mode Inductances
Broadband Performance of This Device Makes It
Ideal for Applications from 800 to 1700 MHz,
Common–Source Class AB Operation.
Typical Performance at Class A Operation:
Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A,
Gain = 12.5 dB, IMD = –32 dB
G
S
Characterized with Small–Signal S–Parameters from 500 to 2500 MHz
Capable of Handling 30:1 VSWR, @ 28 Vdc
Circuit Board Available Upon Request by Contacting RF Tactical Marketing
in Phoenix, AZ
Order this document
by MRF3010/D
MRF3010
10 W, 1.6 GHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 360B–01, STYLE 1
MAXIMUM RATINGS
Drain–Source Voltage
Gate–Source Voltage
Storage Temperature Range
Operating Junction Temperature
Rating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 1 µA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
Symbol
VDSS
VGS
Tstg
TJ
Min
65
Value
65
± 20
– 65 to +150
200
Typ Max
––
– 10
–1
Unit
Vdc
Vdc
°C
°C
Unit
Vdc
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotoTrOolaR, OIncL.A19R98F DEVICE DATA
MRF3010
1









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MRF3010 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
VGS(th)
2
Drain–Source On–Voltage
(VGS = 10 V, ID = 1 A)
VDS(on)
Forward Transconductance
(VDS = 10 V, ID = 1 A)
gfs 0.35
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss –
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
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Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
Crss
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Gps 9.5
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
η 45
Output Mismatch Stress
(VDS = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1600 MHz,
Load VSWR 30:1 at All Phase Angles)
Ψ
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Zin –
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 10 W, IDQ = 50 mA, f = 1.6 GHz)
Zol –
Typ Max
2.5 5
1.5 –
0.55 –
15 –
9–
0.7 –
10.5 –
50 –
No Degradation in Output Power
3.1+j7.18
6.16–j4.75
Unit
Vdc
Vdc
mhos
pF
pF
pF
dB
%
VGG
INPUT
L1
R1
RF
INPUT
Z1
C1
R2
C4 C5
C6
Z2
C2
Z3
C3
R4
DUT
L2
Z4
L3
C9 C10 C11
R3
VDD
+ INPUT
C13
Z5
C7
Z6
C8
RF
C12 OUTPUT
C1, C6, C10, C12
C2, C3, C7, C8
C4, C11
C5, C9
C13
L1
L2
L3
R1
24 pF, “A” Chip Capacitor, ATC
0.8–8.0 pF, Variable Capacitor, Johansen Gigatrim
240 pF, “A” Chip Capacitor, ATC
0.1 µF, Ceramic Capacitor
50 µF, 50 V, Electrolytic Capacitor
Ferroxcube VK200–19/4B
2 Turns, 0.175′′ ID, 20 AWG, Close Wound
10 Turns, 20 AWG, Close Wound
1 k, 1/4 W Resistor
R2
R3
R4
Z1
Z2
Z3
Z4
Z5
Z6
Figure 1. 1.6 GHz Test Circuit Schematic
220 , 1/4 W Resistor
10 k, 2 W Resistor
10 k, 1/8 W Resistor
0.081′′ x 0.42′′ Microstrip
0.081′′ x 1.24′′ Microstrip
0.32′′ x 0.48′′ Microstrip
0.35′′ x 0.5′′ Microstrip
0.15′′ x 0.44′′ Microstrip
0.081′′ x 1.165′′ Microstrip
MRF3010
2
MOTOROLA RF DEVICE DATA









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MRF3010 Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS
14
VDS = 28 Vdc
12 IDQ = 50 mA
f = 1.6 GHz
10 f = 1.64 GHz
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
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Pin, INPUT POWER (Watts)
Figure 2. Output Power versus Input Power
14
VDS = 28 Vdc
12 IDQ = 50 mA
f = 1.6 GHz
10
8
Pin = 1 W
0.75 W
6 0.5 W
4
0.25 W
2
0
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
VDS, DRAIN VOLTAGE (V)
Figure 3. Output Power versus Drain Voltage
100
Ciss
10
Coss
1.0 Crss
0.1
0 5 10 15 20 25 30
VDS, DRAIN SOURCE VOLTAGE (V)
Figure 4. Capacitance versus Drain Voltage
MOTOROLA RF DEVICE DATA
MRF3010
3










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Номер в каталогеОписаниеПроизводители
MRF3010LATERAL N-CHANNEL BROADBAND RF POWER MOSFETMotorola Semiconductors
Motorola Semiconductors

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