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Datasheet B562 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | B562 | PNP Transistor, 2SB562 2SB562
Silicon PNP Epitaxial
Application
• Low frequency power amplifier www.Da•taSCheoemt4pUl.ecmomentary pair with 2SD468
Outline
TO-92MOD
ADE-208-1024 (Z) 1st. Edition Mar. 2001
3 2 1
1. Emitter 2. Collector 3. Base
2SB562
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base vo |  Renesas | data |
B56 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | B560 | Surface Mount Schottky Barrier Rectifiers B520 thru B560
Surface Mount Schottky Barrier Rectifiers
www.datasheet4u.com
Features:
*For Surface Mount Application *Metal-Semiconductor Junction With Guardring *Epitaxial Construction *Very Low Forward Voltage Drop *High Current Capability *Plastic Meterial Has UL Flammability Classification 94V  Weitron Technology rectifier | | |
| 2 | B560 | Surface Mount Schottky Barrier Rectifiers B520 thru B560
Surface Mount Schottky Barrier Rectifiers
Features:
*For Surface Mount Application *Metal-Semiconductor Junction With Guardring *Epitaxial Construction *Very Low Forward Voltage Drop *High Current Capability *Plastic Meterial Has UL Flammability Classification 94V-0 *For Use In Low ,  Weitron rectifier | | |
| 3 | B560C | 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER B520C - B560C
Green
5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Product Summary
B520C/B530C/B540C
VRRM (V)
IO (A)
20/30/40
5.0
B550C/B560C
VRRM (V) 50/60
IO (A) 5.0
VF max (V) 0.55
IR max (mA) 0.5
VF max (V) 0.70
IR max (mA) 0.5
Description and Applications
This Schottky Barrier Recti  Diodes Incorporated rectifier | | |
| 4 | B560CQ | 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER B520CQ - B560CQ
Green
5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Product Summary
B520CQ/B530CQ/B540CQ
VRRM (V)
IO (A)
20/30/40
5.0
B550CQ/B560CQ
VRRM (V) 50/60
IO (A) 5.0
VF Max (V) 0.55
IR Max (mA) 0.5
VF Max (V) 0.70
IR Max (mA) 0.5
Description and Applications
This Schottky Barrie  Diodes rectifier | | |
| 5 | B561 | PNP Transistor, 2SB561
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 200 Renesas data | | |
| 6 | B562 | PNP Transistor, 2SB562 2SB562
Silicon PNP Epitaxial
Application
• Low frequency power amplifier www.Da•taSCheoemt4pUl.ecmomentary pair with 2SD468
Outline
TO-92MOD
ADE-208-1024 (Z) 1st. Edition Mar. 2001
3 2 1
1. Emitter 2. Collector 3. Base
2SB562
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base vo Renesas data | | |
| 7 | B564AY | KSB564AY KSB564A
KSB564A
Audio Frequency Power Amplifier
• • • • Complement to KSD471A Collector Current : IC = -1A Collector Power Dissipation : PC = 800mW Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epi  Fairchild Semiconductor data | |
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