2SC6076 PDF даташит
Спецификация 2SC6076 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «Silicon NPN Epitaxial Type». |
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Детали детали
Номер произв | 2SC6076 |
Описание | Silicon NPN Epitaxial Type |
Производители | Toshiba Semiconductor |
логотип |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6076
Power Amplifier Applications
Power Switching Applications
2SC6076
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A)
High-speed switching: tstg = 0.4 μs (typ)
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 160 V
Collector-emitter voltage
VCEX 160 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
Collector current
VEBO 9 V
DC IC
3A
Pulse
ICP
5A
1 : BASE
2 : COLLECTOR(HEAT SINK)
3 : EMITTER
Base current
IB 1.5 A
Collector power dissipation Tc = 25℃
PC
10 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55~150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight:0.36g(typ)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-16
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Electrical Characteristics (Ta = 25°C)
2SC6076
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
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Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
VCB = 160 V, IE = 0
VEB = 9 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1 A
IC = 0.5 A, IB = 50 mA
IC = 1 A, IB = 100 mA
IC = 1 A, IB = 100 mA
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0,f = 1MHZ
tr
20 μs
Input IB1
Output
tstg IB2
VCC = 24 V
tf IB1 = −IB2 = 100 mA
Duty cycle ≤ 1%
Min Typ. Max Unit
― ― 1.0 μA
― ― 1.0 μA
80 ― ― V
150 ―
―
180 ― 450
100 ―
―
― ― 0.3 V
― ― 0.5 V
― ― 1.5 V
― 150 ― MHZ
― 14 ― pF
― 0.05 ―
― 0.4 ― μs
― 0.15 ―
Marking
C6076
Part No. (or abbreviation code)
Lot code
A line indicates
lead (Pb)-free
package or
lead (Pb)-free finish.
2 2006-11-16
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4
3 300
IC – VCE
200
Common emitter
Tc = 25°C
Pulse test
100
60
2
1
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0
0
20
10
5
2
IB = 1 mA
1234
Collector-emitter voltage VCE (V)
5
2SC6076
3 Common emitter
VCE = 2 V
Pulse test
IC – VBE
2
Tc = 100℃
25
− 55
1
0
0 0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
10000
1000
100
hFE – IC
Common emitter
VCE = 2 V
Pulse test
Tc = 100°C
25
−55
10
1
0.001
0.01
0.1
1
Collector current IC (A)
10
1
Common emitter
IC/IB = 10
Pulse test
VCE (sat) – IC
0.1 Tc = 100°C
25
−55
0.01
0.001
0.001
0.01
0.1
1
Collector current IC (A)
10
fT – IC
1000
100 10
5
10
VCE = 2V
Common emitter
Tc = 25°C
Pulse test
1
0.001
0.01
0.1
1
Collector current IC (A)
10
VBE (sat) – IC
10
Common emitter
IC/IB = 10
Pulse test
1 Tc = −55°C
100
25
0.1
0.001
0.01
0.1
1
Collector current IC (A)
10
3 2006-11-16
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