FQP6N60C PDF даташит
Спецификация FQP6N60C изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «600V N-Channel MOSFET». |
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Детали детали
Номер произв | FQP6N60C |
Описание | 600V N-Channel MOSFET |
Производители | Fairchild Semiconductor |
логотип |
10 Pages
No Preview Available ! |
FQP6N60C/FQPF6N60C
600V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
www.DataSheet4U.com planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 7 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP6N60C FQPF6N60C
600
5.5 5.5 *
3.3 3.3 *
22 22 *
± 30
300
5.5
12.5
4.5
125 40
1.0 0.31
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP6N60C
1.0
0.5
62.5
FQPF6N60C
3.2
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
No Preview Available ! |
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.6
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
www.DataSheet4U.com
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.75 A
VDS = 40 V, ID = 2.75 A
(Note 4)
2.0
--
--
--
1.7
4.8
4.0
2.0
--
V
Ω
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 620 810
-- 65
85
-- 7
10
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 5.5A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 5.5A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
15 40
45 100
45 100
45 100
16 20
3.5 --
6.5 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 5.5
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 22
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
310
2.1
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.2mH, IAS = 5.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
No Preview Available ! |
Typical CharacteristicsTypical Characteristics (Continued)
www.DataSheet4U.com
101 Top :
15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100 Bottom: 4.5 V
10-1
10-2
10-1
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
5
VGS = 10V
4
3
2 VGS = 20V
1
※ Note : TJ = 25℃
0
0 2 4 6 8 10 12 14
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
400
200
0
10-1
Ciss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Coss
Crss
※ Note ;
1.
2.
fV=GS1=M0HVz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
100 25oC
-55oC
10-1
2
※ Notes :
1.
2.
V25DS0µ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5G0S µ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
※ Note : ID = 5.5A
0
0 4 8 12 16
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
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