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PDF PFF4N60 Data sheet ( Hoja de datos )
| Número de pieza | PFF4N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Pyramis | |
| Logotipo |  |
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Pyramis Corporation
PFB4N60/PFF4N60
“The Silicon System Solutions Company”
Applications:
• Adaptor
• Charger
• SMPS Standby Power
• LCD Panel Power
Features:
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
www.DataSheet4U.com
N-Channel MOSFET
VDSS
600V
PRELIMINARY
RDS(ON) typical
1.8 Ω
ID
4.1 A
Ordering Information
PART NUMBER
PACKAGE
BRAND
PFB4N60
PFF4N60
TO-220
TO-220F
PFB4N60
PFF4N60
Absolute Maximum Ratings Tc=25 oC unless otherwise specified
G DS
TO-220
Not to Scale
GDS
TO-220F
Not to Scale
Symbol
Parameter
PFB4N60 PFF4N60
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed DrainCurrent,VGS@10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
4.1 4.1*
Fig. 3
Fig. 6
100 33
0.80 0.26
VGS
EAS
IAS
dv/dt
TL
TPKG
TJ and TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=3.0mH, ID=4.1 Amps
Pulsed Avalanche Engergy
Peak Diode Recovery dv/dt
Maximum Soldering Lead Temperature
Max Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
(NOTE *3)
±30
250
Fig. 8
3.0
300
260
-55 to 150
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the semiconductor device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case.
Junction-to-Ambient
PFB4N60 PFF4N60
1.25 3.8
62.5 62.5
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150 oC
1 cubic foot chamber, free air
©2004 Pyramis Corp.
PFB4N60/PFF4N60 REV. B March 2004
1 page  
100
VGS = 10V
10
PRELIMINARY
Figure 6. Maximum Peak Current Capability
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 1----5---01---2-–--5---T---C---
1
1E-6
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10E-6
100E-6
1E-3 10E-3
tp, Pulse Width (Seconds)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
12
PULSE DURATION = 250 µS
DUTY CYCLE = 0.5% MAX
10 VDS = 15 V
8
-55 oC
+25 oC
6
+150 oC
4
2
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS, Gate-to-Source Voltage (V)
Figure 9. Typical Drain-to-Source ON Resistance
vs Drain Current
3.5
PULSE DURATION = 10 µS
DUTY CYCLE = 0.5% MAX
TC=25°C
3.0
VGS = 10V
2.5
VGS = 20 V
2.0
1.5
1.0
0
2 4 6 8 10
ID, Drain Current (A)
©2004 Pyramis Corp.
12
Figure 8. Unclamped Inductive Switching Capability
100
10
1.0 STARTING TJ = 150 oC
STARTING TJ = 25 oC
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
.1 R equals total Series resistance of Drain circuit
1E-6 10E-6 100E-6 1E-3 10E-3
100E-3
tAV, Time in Avalanche (Seconds)
Figure 10. Typical Drain-to-Source ON Resistance
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1.8
0.6
PULSE DURATION = 250 µS
DUTY CYCLE = 0.5% MAX
0.4 VGS = 10V, ID = 15A
0.2
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
PFB4N60/PFF4N60 REV. B, March 2004
Page 5 of 7
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| PDF Descargar | [ Datasheet PFF4N60.PDF ] | |
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