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HIRF730F PDF даташит

Спецификация HIRF730F изготовлена ​​​​«Hi-Sincerity Mocroelectronics» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв HIRF730F
Описание N-CHANNEL POWER MOSFET
Производители Hi-Sincerity Mocroelectronics
логотип Hi-Sincerity Mocroelectronics логотип 

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HIRF730F Даташит, Описание, Даташиты
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 1/4
HIRF730 / HIRF730F
N-CHANNEL POWER MOSFET
Description
Third Generation HEXFETs from international Rectifier provide the
designer with the best combination of fast switching, ruggedized device
www.DataShdeeest4igUn.c,olmow on-resistance and cost-effectiveness.
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance
Junction to Case Max.
RθJA
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB 1.71
TO-220FP
3.3
62
Units
°C/W
°C/W
HIRF730 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
HIRF730 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain to Current (Continuous)
IDM Drain to Current (Pulsed) (*1)
VGS Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
PD Derate above 25°C
TO-220AB
TO-220FP
EAS Single Pulse Avalanche Energy (*2)
IAR Avalanche Current (*1)
EAR Repetitive Avalanche Energy (*1)
dv/dt Peak Diode Recovery (*3)
Tj Operating Temperature Range
Tstg Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=16mH, RG=25, IAS=5.5A
*3: ISD5.5A, di/dt90A/us, VDDV(BR)DSS, TJ150°C
HIRF730, HIRF730F
Value
400
5.5
22
±20
74
38
0.58
0.3
290
5.5
7.4
4
-55 to 150
-55 to 150
300
Units
V
A
A
V
W
W/°C
mJ
A
mJ
V/ns
°C
°C
°C
HSMC Product Specification









No Preview Available !

HIRF730F Даташит, Описание, Даташиты
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 2/4
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
www.DataSheet4UIG.ScSoRm
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=400V, VGS=0V)
Drain-Source Leakage Current (VDS=320V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=3.3A)(*4)
Forward Transconductance (VDS=50V, ID=3.3A)(*4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=200V, ID=3.5A, RG=12,
RD=57)(*4)
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=320V, ID=3.5A, VGS=10V)
(*4)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*4: Pulse Test: Pulse Width300us, Duty Cycle2%
Source-Drain Diode
Symbol
Characteristic
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
trr Reverse Recovery Time
VSD Diode Forward Voltage
**: Negligible, Dominated by circuit inductance
IF=3.5A, di/dt=100A/us, Tj=25°C
(*4)
IS=5.5A, VGS=0V, Tj=25°C (*4)
Min. Typ. Max. Unit
400 - - V
- - 1 uA
50 uA
- - 100 nA
- - -100 nA
2 - 4V
- - 1
2.9 - - S
- 700 -
- 170 - pF
- 64 -
- 10 -
- 15 -
ns
- 38 -
- 14 -
- - 38
- - 5.7 nC
- - 22
- 4.5 - nH
- 7.5 - nH
Min. Typ. Max. Units
- 1.8 2.2 uC
- ** -
- 270 530 ns
- - 1.6 V
HIRF730, HIRF730F
HSMC Product Specification









No Preview Available !

HIRF730F Даташит, Описание, Даташиты
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 3/4
TO-220AB Dimension
A
D
B
E
F
www.DataSheet4U.com
G
I
Tab
P
L
H
3
2
1
M
O
J
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
C
Normal: None H
I RF
730
Date Code
Control Code
K
Note: Green label is used for pb-free packing
N Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I - *3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N - *2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
TO-220FP Dimension
A
α1
D
α2 α3
α4
α5
EO
C
G
F
M
I
3
2
1
N
L
J
K
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H I RF
730F
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
D
E
F
G
I
J
K
L
M
N
O
α1/2/4/5
α3
Min.
6.48
4.40
2.34
0.45
9.80
3.10
2.70
0.60
2.34
12.48
15.67
0.90
2.00
-
-
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5o
*27o
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HIRF730, HIRF730F
HSMC Product Specification










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