DataSheet26.com

AF4512C PDF даташит

Спецификация AF4512C изготовлена ​​​​«Anachip» и имеет функцию, называемую «P & N-Channel 30-V (D-S) MOSFET».

Детали детали

Номер произв AF4512C
Описание P & N-Channel 30-V (D-S) MOSFET
Производители Anachip
логотип Anachip логотип 

8 Pages
scroll

No Preview Available !

AF4512C Даташит, Описание, Даташиты
P & N-Channel 30-V (D-S) MOSFET
AF4512C
Features
General Description
-Low rDS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
www.DataSheet4U.comapplications
These miniature surface mount MOSFETs utilize High
Cell Density process. Low rDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are PWMDC-DC converters, power
management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones
power system.
Product Summary
VDS (V)
30
-30
rDS(on) (m)
40@VGS=4.5V
28@VGS=10V
80@VGS=-4.5V
52@VGS=-10V
ID (A)
6.0
7.0
-4.0
-5.2
Pin Assignments
S1 1
G1 2
S2 3
G2 4
SOP-8
8 D1
7 D1
6 D2
5 D2
Pin Descriptions
Pin Name
S1
G1
D1
S2
G2
D2
Description
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
Ordering information
A X 4512C X X X
Feature
F :MOSFET
PN
Package
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/8









No Preview Available !

AF4512C Даташит, Описание, Даташиты
P & N-Channel 30-V (D-S) MOSFET
AF4512C
Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Symbol
VDS
VGS
ID
www.DataSheet4U.com
IDM
IS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TA=25ºC
TA=70ºC
Continuous Source Current (Diode Conduction) (Note 1)
Power Dissipation (Note 1)
TA=25ºC
TA=70ºC
Operating Junction and Storage Temperature Range
N-Channel
30
20
7
5.6
20
1.3
2.1
1.3
-
P-Channel
-30
-20
-5.2
-6.8
-20
-1.3
2.1
1.3
-55 to 150
Units
V
A
A
A
W
ºC
Thermal Resistance Ratings
Symbol
Parameter
RθJC Maximum Junction-to-Case (Note 1)
RθJA Maximum Junction-to-Ambient (Note 1)
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
t < 5 sec
t < 5 sec
Specifications (TA=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Static
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 3)
Drain-Source On-Resistance
(Note 3)
Forward Tranconductance
(Note 3)
VGS=0V, ID=250uA
VGS=0V, ID=-250uA
VDS= VGS, ID=250uA
VDS= VGS, ID=-250uA
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VDS=24V, VGS=0V
VDS=-24V, VGS=0V
VDS=5V, VGS=10V
VDS=-5V, VGS=-10V
VGS=10V, ID=7A
VGS=4.5V, ID=6A
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
VDS=15V, ID=7A
VDS=-15V, ID=-5A
Ch
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Maximum
40
60
Units
ºC/W
ºC/W
Limits
Min. Typ.
Max.
Unit
30 -
-30 -
-
-
V
1 1.95
-1.0 -1.7
3
-3
V
-
-
-
-
±100
±100
nA
-
-
-
-
1
-1
uA
20 -
-20 -
-
-
A
- 19 28
-
-
24
42
40
52
m
- 65 80
- 25 -
- 10 -
S
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
2/8









No Preview Available !

AF4512C Даташит, Описание, Даташиты
P & N-Channel 30-V (D-S) MOSFET
AF4512C
Specifications (TA=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Ch
Limits
Min. Typ.
Max.
Unit
Dynamic
Qg
www.DataSheet4U.com Qgs
Total Gate Charge
Gate-Source Charge
N-Channel
N - 10.7 26
VDS=15V, VGS=10V P - 10 13
ID=7A
P-Channel
N
P
- 1.7 -
- 2.2 -
nC
Qgd Gate-Drain Charge
VDS=-15V, VGS=-10V
ID=-5A
N
P
- 2.1 -
- 1.7 -
Switching
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall-Time
N-Channel
VDD=15, VGS=10V
ID=1A, RGEN=6
P-Channel
VDD=-15, VGS=-10V
ID=-1A, RGEN=6
N
P
N
P
N
P
N
P
- 8 16
- 7 14
- 5 10
-
-
13
23
24
37
nS
- 14 25
- 36
9 17
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
3/8










Скачать PDF:

[ AF4512C.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
AF4512CP & N-Channel 30-V (D-S) MOSFETAnachip
Anachip

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск