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IPB06N03LAG PDF даташит

Спецификация IPB06N03LAG изготовлена ​​​​«Infineon Technologies» и имеет функцию, называемую «Power-Transistor».

Детали детали

Номер произв IPB06N03LAG
Описание Power-Transistor
Производители Infineon Technologies
логотип Infineon Technologies логотип 

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IPB06N03LAG Даташит, Описание, Даташиты
www.DataSheet4U.com
OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
IPB06N03LA G
Product Summary
V DS
R DS(on),max (SMD version)
ID
25 V
5.9 m
50 A
PG-TO263-3-2
Type
IPB06N03LA G
Package
PG-TO263-3-2
Marking
06N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=45 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 1.6
page 1
Value
50
50
350
225
6
±20
83
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-10









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IPB06N03LAG Даташит, Описание, Даташиты
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Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area5)
IPB06N03LA G
min.
Values
typ.
Unit
max.
- - 1.8 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=40 µA
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
25
1.2
-
-
1.6
0.1
-V
2
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=25 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=4.5 V, I D=30 A,
SMD version
-
-
-
10 100
10 100 nA
7.6 9.5 m
Gate resistance
Transconductance
V GS=10 V, I D=30 A,
SMD version
-
4.9 5.9
R G - 1.2 -
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
29
58
-S
2) Current is limited by bondwire; with an
R thJC=1.8 K/W the chip is able to carry 91
3) See figure 3
4) T j,max=150 °C and duty cycle D <0.25 for
V
5)
GS<-5 V
Device on
40
mm
x
40
mm
x
1.5
mm
epoxy PCB FR4 with 6 cm2 (one layer, 70
Rev. 1.6
page 2
2006-05-10









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IPB06N03LAG Даташит, Описание, Даташиты
www.DataSheet4U.com
Parameter
Symbol Conditions
IPB06N03LA G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7
-
-
-
-
-
-
-
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
V DD=15 V, I D=25 A,
V GS=0 to 5 V
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
Q oss
V DD=15 V, V GS=0 V
-
-
-
-
-
-
-
-
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
-
-
2093
800
98
11
30
30
4.4
2653 pF
1064
147
16 ns
38
45
6.6
6.7 9.0 nC
3.3 4.2
4.6 6.9
8.0 11
17 22
3.2 - V
15 19 nC
17 22
-
-
0.94
50 A
350
1.2 V
- 10 nC
6) See figure 16 for gate charge parameter definition
Rev. 1.6
page 3
2006-05-10










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