B1240 PDF даташит
Спецификация B1240 изготовлена «ROHM Electronics» и имеет функцию, называемую «PNP Transistor - 2SB1240». |
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Детали детали
Номер произв | B1240 |
Описание | PNP Transistor - 2SB1240 |
Производители | ROHM Electronics |
логотип |
3 Pages
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Transistors
2SB1188 / 2SB1182 / 2SB1240
Medium power transistor (−32V, −2A)
2SB1188 / 2SB1182 / 2SB1240
!Features
1) Low VCE(sat).
VCE(sat) = −0.5V (Typ.)
(IC/IB = −2A / −0.2A)
2) Complements the 2SD1766 /
2SD1758 / 2SD1862
!Structure
Epitaxial planar type
PNP silicon transistor
!External dimensions (Units : mm)
2SB1188
2SB1182
4.5
+0.2
−0.1
1.6±0.1
1.5
+0.2
−0.1
6.5±0.2
5.1+−00..21
C0.5
2.3+−00..21
0.5±0.1
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4
+0.1
−0.05
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol: BC∗
2SB1240
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
!Absolute maximum ratings (Ta=25°C)
∗ Denotes hFE
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
−40
−32
−5
−2
−3
Collector power
dissipation
2SB1188
2SB1182
PC
0.5
2
10
2SB1240
1
Junction temperature
Tj 150
Storage temperature
Tstg −55~+150
∗1 Single pulse, PW=100ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
(1) Emitter
(2) Collector
(3) Base
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
W ∗2
W(TC=25°C)
W ∗3
°C
°C
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Transistors
2SB1188 / 2SB1182 / 2SB1240
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
∗ Measured using pulse current.
Cob
Min.
−40
−32
−5
−
−
−
82
−
−
Typ.
−
−
−
−
−
−0.5
−
100
50
Max.
−
−
−
−1
−1
−0.8
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−20V
VEB=−4V
IC/IB=−2A/−0.2A
VCE=−3V, IC=−0.5A
VCE=−5V, IE=0.5A, f=30MHz
VCB=−10V, IE=0A, f=1MHz
∗
∗
!Packaging specifications and hFE
Type
2SB1188
2SB1182
2SB1240
Package
Code
hFE Basic ordering unit (pieces)
PQR
PQR
PQR
T100
1000
−
−
Taping
TL
2500
−
−
TV2
2500
−
−
hFE values are classified as follows :
Item P
Q
hFE 82~180 120~270
R
180~390
!Electrical characteristic curves
−1000 Ta=100°C
−500
25°C
−40°C
−200
−100
−50
VCE=−3V
−20
−10
−5
−2
−1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
−0.5
Ta=25°C −2.5mA
−0.4
−0.3
−0.2
−2.25mA
−2mA
−1.75mA
−1.5mA
−1.25mA
−1mA
−750µA
−500µA
−0.1
−250µA
0 IB=0A
0 −0.4 −0.8 −1.2 −1.6 −2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
500 Ta=25°C
VCE=−6V
−3V
−1V
200
100
50
20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current ( Ι )
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Transistors
2SB1188 / 2SB1182 / 2SB1240
500
Ta=100°C
25°C
−25°C
200
100
50
VCE=−3V
20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( ΙΙ )
−500 Ta=25°C
−500 lC/lB=10
−200
−100 IC/IB=50
−50 20
10
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
−200
−100 Ta=100°C
25°C
−40°C
−50
−20
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
Ta=25°C
−1
−0.5
IC /IB=10
−0.2
−0.1
−0.05
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLETOR CURRENT : IC (mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
500
Ta=25°C
300
Ta=25°C
VCE=−5V
200
Cib f=1MHz
IE=0A
IC=0A
100
200
Cob
50
100
20
50 10
5 10 20 50 100 200 500 1000 2000
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
−0.5 −1 −2
−5 −10 −20 −30
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
−5
IC Max. (pulse)
−2
−1
−0.5
−0.2 DC
−0.1
−0.05
Ta=25°C
∗Single
−0.02 nonrepetitive
−0.01 pulse
−0.1 −0.2 −0.5 −1
−2
−5 −10 −20 −50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operation area
(2SB1188)
−5
IC Max. (Pulse)
PW=500µs
−2
DC
−1
−0.5 PW=1ms
−0.2 PW=100ms
−0.1
−0.05
Ta=25°C
−0.02
∗Single
nonrepetitive
−0.01 pulse
−0.1 −0.2 −0.5 −1
−2
−5 −10 −20 −50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 Safe operation area
(2SB1182)
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