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MNA14 PDF даташит

Спецификация MNA14 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Multi-layer ceramic chip capacitor networks».

Детали детали

Номер произв MNA14
Описание Multi-layer ceramic chip capacitor networks
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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MNA14 Даташит, Описание, Даташиты
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Ceramic capacitors
Multi-layer ceramic chip capacitor
networks
MNA14
MNA14 (1608 (0603) × 4 size, chip capacitor networks)
!Features
1) Area ratio is approximately 55% smaller than that of
the MCH18, enabling high - density mounting.
2) Mounting costs are reduced.
3) Use of convex electrodes prevents solder bridging
during mounting, and makes it easy to perform
a visual inspection of the mounted piece.
Also facilitates automatic inspection.
4) Barrier layer and end terminations to improve
solderability.
5) Each element is independent to ensure a wide
range of circuit applications.
6) Can be packed on tape.
!External dimensions (Units : mm)
0.55±0.1 0.7±0.2
0.85±0.1
0.8±0.1
3.2±0.2
0.8±0.1
Land pattern in 0.8mm pitch between each electrode is recommended.
!Structure
!Equivalent circuits
C1 C2 C3 C4
C1 = C2 = C3 = C4
Internal electrode
Ceramic element
External electrode ΙΙΙ (coating layer)
External electrode ΙΙ (barrier layer)
External electrode Ι (thick membrane layer)
The design and specifications are subject to change without prior notice. Before ordering or using, please check the latest technical specification.









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MNA14 Даташит, Описание, Даташиты
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Ceramic capacitors
!Product designation
Part No.
MNA14
Code Product thickness Packaging specifications
K 0.8mm Paper tape (width 8 mm, pich 4 mm)
Reel (φ180mm) : compatible with EIAJ ET-7200A
Packaging style
Reel
φ180mm (7in.)
Basic ordening unit (pcs.)
4,000
MNA 1 4 5 A 1 0 1 K K
Rated voltage
Code Voltage
2 25V
5 50V
Capacitance-temperature characteristics
Nominal Capacitance tolerance
Code EIA code Operating temperature range (°C) Temp. coefficient or percent change capacitance Code tolerace
A C0G
CN X7R
55 ~ +125
55 ~ +125
0 ± 30ppm / °C
± 15%
3-digit designation K
according IEC M
± 10%
± 20%
!Capacitance range
Product name
Temperature characteristic
Capacitance (pF) Rated voltage
Tolerance
10
22
47
100
220
470
1,000
2,200
4,700
10,000
22,000
A (C0G)
50V
K ( ± 10%)
MNA 14
CN (X7R)
25V
M ( ± 20%)
Product thickness (mm) 0.8 ± 0.1
The design and specifications are subject to change without prior notice. Before ordering or using, please check the latest technical specification.









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MNA14 Даташит, Описание, Даташиты
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Ceramic capacitors
!Characteristics
Class 1 (For thermal compensation)
Temperature characteristics
Item
Operating temperature
Nominal capacitance (C)
Dissipation factor (tanδ)
Insulation resistance (IR)
Withstanding voltage
Temperature characteristics
Terminal adherence
Resistance
to vibration
Appearance
Rate of capacitance change
Dissipation factor (tanδ)
Solderability
Appearance
Resistance
to soldering
heat
Rate of capacitance change
Dissipation factor (tanδ)
Insulation resistance
Withstanding voltage
Appearance
Temperature Rate of capacitance change
cycling
Dissipation factor (Tanδ)
Insulation resistance
Appearance
Rate of capacitance change
Humidity load
test Dissipation factor (tanδ)
Insulation resistance
High-
temperature
load test
Appearance
Rate of capacitance change
Dissipation factor (tanδ)
Insulation resistance
A (C0G)
55°C ~ +125°C
Must be within the specified tolerance range.
100 / (400 + 20C)% or less: Less than 30 pF
0.1% or less : 30 pF or larger
10,000Mor 500MΩ⋅µF, whichever is smaller
The insulation must not be damaged.
Within 0 ± 30ppm / °C
No detachment or signs of detachment.
There must be no mechanical damage.
Must be within initial tolerance.
Must satisfy initial specified value.
At least 3/4 of the surface of the two terminals
must be covered with new solder.
There must be no mechanical damage.
± 2.5% or ± 0.25 pF, whichever is larger
Must satisfy initial specified value.
10,000Mor 500MΩ⋅µF, whichever is smaller
The insulation must not be damaged.
There must be no mechanical damage.
± 2.5% or ± 0.25 pF, whichever is larger
Must satisfy initial specified value.
10,000Mor 500MΩ⋅µF, whichever is smaller
There must be no mechanical damage.
± 7.5% or ± 0.75 pF, whichever is larger
0.5% or less
500Mor 25MΩ⋅µF, whichever is smaller
There must be no mechanical damage.
± 3.0% or ± 0.3 pF, whichever is larger
0.3% or less
10,000Mor 50MΩ⋅µF, whichever is smaller
MNA14
Test methods / conditions
(based on JIS C 5102)
Based on paragraph 7.8 and paragraph 9,
Measured at room temperature and standard humidity.
Measurement frequency : 1 ± 0.1MHz
Measurement voltage : 1 ± 0.1Vrms.
Based on paragraph 7.6.
Measurement is made after rated voltage is
applied for 60 ± 5s.
Based on paragraph 7.1.
Apply 300% of the rated voltage for 1 to 5s
then measure.
The temperature coefficients in table 12, paragraph
7.12 are calculated at 20°C and high temperature.
Based on paragraph 8.11.2.
Apply 5N for 10 ± 1s
in the direction
indicated by the arrow.
Pressure (5N)
Test board
Capacitor
Chip is mounted to a board in the manner
shown on the right, subjected to vibration
(type A in paragraph 8.2), and
measured 24 ± 2 hours later.
Board
Based on paragraph 8.13,
Soldering temperature : 235 ± 5°C
Soldering time
: 2 ± 0.5s
Based on paragraph 8.14.
Soldering temperature : 260 ± 5°C
Soldering time
: 5 ± 0.5s
Preheating
: 150 ± 10°C for 1 to 2 min.
Based on paragraph 9.3,
Number of cycles : 5
Capacitance measured after 24 ± 2 hrs.
Based on paragraph 9.9,
Test temperature : 40 ± 2°C
Relative humidity : 90% to 95%
Applied voltage : rated voltage
Test time
: 500 to 524 hrs.
Capacitance measured after 24 ± 2 hrs.
Based on paragraph 9.10,
Test temperature : Max. operating temp.
Applied voltage : rated voltage × 200%
Test time
: 1,000 to 1,048 hrs.
Capacitance measured after 24 ± 2 hrs.
The design and specifications are subject to change without prior notice. Before ordering or using, please check the latest technical specification.










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Номер в каталогеОписаниеПроизводители
MNA14Multi-layer ceramic chip capacitor networksROHM Semiconductor
ROHM Semiconductor

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