K2611 PDF даташит
Спецификация K2611 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «9A, 900V, N-Channel MOSFET, 2SK2611». |
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Детали детали
Номер произв | K2611 |
Описание | 9A, 900V, N-Channel MOSFET, 2SK2611 |
Производители | Toshiba Semiconductor |
логотип |
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2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)
z High forward transfer admittance : |Yfs| = 7.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
9
27
150
663
9
15
150
−55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 4 A
VDS = 15 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2611
Min Typ. Max Unit
— — ±10
±30 —
—
— — 100
900 —
—
2.0 — 4.0
— 1.1 1.4
3.0 7.0
—
— 2040 —
— 45 —
— 190 —
μA
V
μA
V
V
Ω
S
pF
— 25 —
Switching time
Turn−on time
Fall time
ton
tf
— 60 —
ns
— 20 —
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
toff
Qg
Qgs VDD ≈ 400 V, VGS = 10 V, ID = 9 A
Qgd
— 95 —
— 58 —
— 32 — nC
— 26 —
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
Min
——
—
IDR = 9 A, VGS = 0 V
IDR = 9 A, VGS = 0 V, dIDR / dt = 100 A / μs
—
—
—
—
Typ. Max
—9
— 27
— −1.9
1.6 —
20 —
Unit
A
A
V
μs
μC
Marking
TOSHIBA
K2611
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SK2611
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