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PDF MRF284S Data sheet ( Hoja de datos )
| Número de pieza | MRF284S | |
| Descripción | RF Power Field-Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
www.DSatEaSMheICetO4UN.cDomUCTOR TECHNICAL DATA
Order this document
by MRF284/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
MRF284
MRF284S
Designed for PCN and PCS base station applications at frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN–PCS/cellular radio
and wireless local loop.
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts (PEP)
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = –29 dBc
• Typical Single–Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts (CW)
Power Gain = 9.5 dB
Efficiency = 45%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)
Output Power
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
V(BR)DSS
IDSS
IGSS
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Min
65
—
—
30 W, 2000 MHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF284)
CASE 360C–03, STYLE 1
(MRF284S)
Value
65
± 20
87.5
0.5
– 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Max Unit
2.0 °C/W
Typ Max Unit
— — Vdc
— 1.0 µAdc
— 10 µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
©MMOotTorOolRa,OInLc.A19R97F DEVICE DATA
MRF284 MRF284S
1
1 page  
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
40 14
Pout
35 13
30 12
25 11
20 10
Gpe
15 9
10 8
VDD = 26 Vdc
5 IDQ = 200 mA
7
f = 2000 MHz Single Tone
06
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Pin, INPUT POWER (WATTS)
Figure 3. Output Power & Power Gain
versus Input Power
45
4W
40
3W
35
2W
30
25
Pin = 1 W
20
VDD = 26 Vdc
15 IDQ = 200 mA
Single Tone
10
1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000
f, FREQUENCY (MHz)
Figure 4. Output Power versus Frequency
– 20
VDD = 26 Vdc
– 30
IDQ = 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 40
– 50 3rd Order
5th Order
– 60
7th Order
– 70
– 80
0.1
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
– 20
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 30
100 mA
– 40 300 mA
– 50
IDQ = 400 mA
200 mA
– 60
0.1
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion
versus Output Power
12 –10
11 –15
Gpe
10 –20
9 –25
8 –30
Pout = 30 W (PEP)
7 IDQ = 200 mA
f1 = 2000.0 MHz
IMD –35
f2 = 2000.1 MHz
6 –40
16 18 20 22 24 26 28
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
Figure 6. Power Gain and Intermodulation
Distortion versus Supply Voltage
13
IDQ = 400 mA
300 mA
12
200 mA
11
10
9 100 mA
8
0.1
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
MRF284 MRF284S
5
5 Page 
www.DataSheet4U.com
PACKAGE DIMENSIONS
G
–B–
1
3
2 Q 2 PL
KD
0.25 (0.010) M T A M B M
F
H EN
C
–T–
SEATING
PLANE
–A–
CASE 360B–01
ISSUE O
(MRF284)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.790 0.810
B 0.220 0.240
C 0.125 0.175
D 0.205 0.225
E 0.050 0.070
F 0.004 0.006
G 0.562 BSC
H 0.070 0.090
K 0.215 0.255
N 0.350 0.370
Q 0.120 0.140
MILLIMETERS
MIN MAX
20.07 20.57
5.59 6.09
3.18 4.45
5.21 5.71
1.27 1.77
0.11 0.15
14.27 BSC
1.78 2.29
5.47 6.47
8.89 9.39
3.05 3.55
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
–B–
K
E
H
1
2
D
N
3
–A–
F
C
–T–
SEATING
PLANE
CASE 360C–03
ISSUE B
(MRF284S)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.370 0.390
B 0.220 0.240
C 0.105 0.155
D 0.205 0.225
E 0.035 0.045
F 0.004 0.006
H 0.057 0.067
K 0.085 0.115
N 0.350 0.370
MILLIMETERS
MIN MAX
9.40 9.91
5.59 6.09
2.67 3.94
5.21 5.71
0.89 1.14
0.11 0.15
1.45 1.70
2.16 2.92
8.89 9.39
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MOTOROLA RF DEVICE DATA
MRF284 MRF284S
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF284S.PDF ] | |
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