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Número de pieza | AO3401A | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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AO3401A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3401A uses advanced trench technology to provide
excellent RDS(ON) , low gate charge and operation gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or other general applications. Standard product
AO3401A is Pb-free (meets ROHS & Sony 259
specifications).
Features
VDS (V) = -30V
ID = -4.3A
(VGS = -10V)
RDS(ON) < 46mΩ (VGS = -10V)
RDS(ON) < 55mΩ (VGS = -4.5V)
RDS(ON) < 80mW (VGS = -2.5V)
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A,F
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±12
-4.3
-3.8
-25
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO3401A.PDF ] |
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