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C2570A Datasheet Download - NEC

Номер произв C2570A
Описание 2SC2570A
Производители NEC
логотип NEC логотип 


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C2570A Даташит, Описание, Даташиты
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DATA SHEET
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
• Low noise and high gain
• Wide dynamic range
: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA
: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA
ORDERING INFORMATION
Part Number
2SC2570A
2SC2570A-T
Quantity
Loose products (500 pcs)
Taping products (Box type) (2 500 pcs)
Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
Ptot
Junction Temperature
Tj
Storage Temperature
Tstg
Ratings
25
12
3.0
70
600
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1980, 1999







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C2570A Даташит, Описание, Даташиты
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2SC2570A
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
Maximum Available Gain
Collector Cutoff Current
Emitter Cutoff Current
Symbol
h Note 1
FE
fT
C Note 2
Ob
|S21e|2
NF
MAG
ICBO
IEBO
Test Conditions
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCB = 15 V, IE = 0
VEB = 2.0 V, IC = 0
MIN.
40
8
TYP.
5.0
0.7
10
1.5
11.5
MAX.
200
0.9
3.0
0.1
0.1
Unit
GHz
pF
dB
dB
dB
µA
µA
Notes 1. Pulse Measurement: PW 350 µs, Duty Cycle 2%
2. The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
2 Data Sheet P10404EJ3V0DS00







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TYPICAL CHARACTERISTICS (TA = +25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
600
free Air
400
200
2SC2570A
0 50 100 150 200
Operating Ambient Temperature TA (°C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 10 V
10
5
20
10
0.5
1 5 10
Collector Current IC (mA)
50
1
0.5
0.5
0.6 0.7 0.8
Base to Emitter Voltage VBE (V)
0.9
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
VCE = 10 V
5
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = 10 V
f = 1.0 GHZ
2
1
0.5
0.2
0.1
0.5 1
5 10
Collector Current IC (mA)
50 70
10
5
0
0.5 1
5 10
Collector Current IC (mA)
Data Sheet P10404EJ3V0DS00
50 70
3








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