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PT800J PDF даташит

Спецификация PT800J изготовлена ​​​​«Diotec Semiconductor» и имеет функцию, называемую «(PT800x) Single Diode Silizium-Gleichrichter».

Детали детали

Номер произв PT800J
Описание (PT800x) Single Diode Silizium-Gleichrichter
Производители Diotec Semiconductor
логотип Diotec Semiconductor логотип 

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PT800J Даташит, Описание, Даташиты
www.DataSheet4U.com
PT800A ... PT800M
Version 2007-07-06
10±0.2
4 3.8
Type
Typ
123
4
1.5 1 2 3
0.9
5.08
Dimensions - Maße [mm]
PT800A ... PT800M
Silicon Rectifiers – Single Diode
Silizium-Gleichrichter – Einzeldiode
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
8A
50...1000 V
TO-220AC
1.8 g
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
PT800A
PT800B
PT800D
PT800G
PT800J
PT800K
PT800M
50
100
200
400
600
800
1000
50
100
200
400
600
800
1000
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 8 A
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
< 1.0
< 1.1
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 100°C
IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i2t
Tj
TS
8A
30 A 2)
135/150 A
90 A2s
-50...+150°C
-50...+175°C
1 Tj = 25°C
2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
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PT800J Даташит, Описание, Даташиты
www.DataSheet4U.com
Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
PT800A ... PT800M
Tj = 25°C VR = VRRM
IR
Kennwerte
< 10 µA
RthC < 2.5 K/W
120
[%]
100
80
60
40
20
IFAV
0
0 TC 50 100 150 [°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
102
[A]
10
Tj = 125°C
1 Tj = 25°C
10-1
IF
10-2
200a-(5a-0.95v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
2
http://www.diotec.com/
© Diotec Semiconductor AG










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