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NTD5P06V PDF даташит

Спецификация NTD5P06V изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTD5P06V
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTD5P06V Даташит, Описание, Даташиты
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MTD5P06V
Preferred Device
Power MOSFET
5 Amps, 60 Volts
P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 M)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp 10 ms)
Drain Current − Continuous @ 25°C
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp 10 µs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 2.)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60 Vdc
60 Vdc
± 15
± 25
5
4
18
40
0.27
2.1
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, Tstg −55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 5 Apk, L = 10 mH, RG = 25 )
EAS
125 mJ
Thermal Resistance
− Junction to Case
− Junction to Ambient (Note 1.)
− Junction to Ambient (Note 2.)
RθJC
RθJA
RθJA
°C/W
3.75
100
71.4
Maximum Lead Temperature for Soldering
Purposes, 1/8from Case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum
recommended pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
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V(BR)DSS
60 V
RDS(on) TYP
340 mW
ID MAX
5.0 A
P−Channel
D
G
4
12
3
DPAK
CASE 369C
Style 2
4
S
MARKING DIAGRAMS
4
Drain
1
Gate
2
Drain
3
Source
4
Drain
1
2
3
DPAK
CASE 369D
Style 2
5P06V
Y
WW
Device Code
= Year
= Work Week
12 3
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
NTD5P06V
NTD5P06V−1
NTD5P06VT4
DPAK
DPAK
Straight Lead
75 Units/Rail
75 Units/Rail
DPAK 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 3
1
Publication Order Number:
MTD5P06V/D









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NTD5P06V Даташит, Описание, Даташиты
MTD5P06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
60
− 61.2
Vdc
− mV/°C
IDSS
µAdc
− − 10
− − 100
IGSS
− − 100 nAdc
VGS(th)
Vdc
2.0 2.8 4.0
− 4.7 − mV/°C
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 2.5 Adc)
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 5 Adc)
(VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150°C)
Forward Transconductance
(VDS = 15 Vdc, ID = 2.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 5 Adc,
VGS = 10 Vdc,
RG = 9.1 )
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 5 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 5 Adc, VGS = 0 Vdc)
(IS = 5 Adc, VGS = 0 Vdc, TJ = 150°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
− 0.34 0.45 Ohm
Vdc
− − 2.7
− − 2.6
1.5 3.6
Mhos
367 510
pF
− 140 200
− 29 60
− 11 20 ns
− 26 50
− 17 30
− 19 40
− 12 20 nC
− 3.0 −
− 5.0 −
− 5.0 −
Vdc
− 1.72 3.5
− 1.34 −
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
− 97 −
− 73 −
− 24 −
− 0.42 −
ns
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
LD nH
− 4.5 −
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
LS
nH
− 7.5 −
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NTD5P06V Даташит, Описание, Даташиты
MTD5P06V
TYPICAL ELECTRICAL CHARACTERISTICS
10
VGS = 10V
8 TJ = 25°C
6
8V
9V
7V
6V
4
5V
2
4V
0
012 34 5
67 89
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
10
9 VDS 10 V
8
7
TJ = −55°C
25°C
100°C
6
5
4
3
2
1
0
23 4 5 6 7 8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
VGS = 10 V
0.55
0.5
TJ = 100°C
0.45
0.4 25°C
0.35
0.3
0.25 − 55°C
0.2
1 2 3 4 5 6 7 8 9 10
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.4
TJ = 25°C
0.35
0.3
VGS = 10 V
15 V
0.25
0.2
1 2 3 4 5 6 7 8 9 10
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 10 V
1.6 ID = 2.5 A
1.4
1.2
1
0.8
0.6
0.4
0.2
−50 −25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
VGS = 0 V
10 TJ = 125°C
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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