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6MBI225U-170 PDF даташит

Спецификация 6MBI225U-170 изготовлена ​​​​«FE» и имеет функцию, называемую «IGBT Module U-Series 1700V / 225A 6 in one-package».

Детали детали

Номер произв 6MBI225U-170
Описание IGBT Module U-Series 1700V / 225A 6 in one-package
Производители FE
логотип FE логотип 

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6MBI225U-170 Даташит, Описание, Даташиты
6MBI225U-170www.DataSheet4U.com
IGBT Module U-Series 1700V / 225A 6 in one-package
Features
Applications
· High speed switching
· Inverter for Motor drive
· Uninterruptible power supply
· Voltage drive
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
· Low inductance module structure
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Conditions
Rating
Unit
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
VCES
VGES
IC
Continuous Tc=25°C
1700
±20
300
V
V
A
Tc=80°C
225
ICp
1ms Tc=25°C
600
Tc=80°C
450
-IC 225
Collector Power Dissipation
Junction temperature
-IC pulse
PC
Tj
1 device
450
1040
+150
W
°C
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
-40 to +125
3400
VAC
between thermistor and others *2
Screw Torque Mounting *3
-
3.5 N·m
Terminals *4
*1 : All terminals should be connected together when isolation test will be done.
4.5
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Unit
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VGE=0V, VCE=1700V
VCE=0V, VGE=±20V
VCE=20V, IC=225mA
VGE=15V, IC=225A Tj=25°C
Tj=125°C
Min.
4.5
Typ.
6.5
2.30
2.65
Max.
3.0
600
8.5
2.80
mA
nA
V
V
VCE(sat)
Tj=25°C
2.05 2.55
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=900V
IC=225A
VGE=±15V
RG=3
VGE=0V
IF=225A
Tj=25°C
Tj=125°C
Tj=25°C
2.40
23
0.58
0.32
0.10
0.80
0.15
2.05
2.25
1.80
– nF
1.20 µs
0.60
1.50
0.30
2.80 V
2.55
Reverse recovery time
Lead resistance, terminal-chip*4
Resistance
(chip)
trr
R lead
R
B value
B
*4:Biggest internal terminal resistance among arm.
IF=225A
T=25°C
T=100°C
T=25/50°C
Tj=125°C
465
3305
2.00
0.3
1.0
5000
495
3375
0.6
520
3450
µs
m
Κ
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Unit
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
Typ.
0.0167
Max.
0.12
0.20
°C/W
°C/W
°C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.









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6MBI225U-170 Даташит, Описание, Даташиты
6MBI225U-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
600
500
VGE=20V 15V
400
12V
300
200
100
0
0
10V
9V
1 23 4
Collector-Emitter voltage : VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
600
500
T j=25°C
400
T j=125°C
300
200
100
0
0 1 23 4
Collector-Emitter voltage : VCE [V]
5
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
1000.0
100.0
Cies
10.0
Cres
1.0
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [V]
30
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
600
500
VGE=20V
15V
400
12V
300
200
100
0
0
10V
9V
1 234
Collector-Emitter voltage : VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2 Ic=450A
Ic=225A
Ic=112.5A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=900V, Ic=225A, Tj= 25°C
VGE
VCE
0
500
1000
1500
Gate charge : Qg [ nC ]









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6MBI225U-170 Даташит, Описание, Даташиты
6MBI225U-170
10000
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=3, Tj= 25°C
10000
IGBT Module
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=3, Tj=125°C
1000
toff
100
ton
1000
toff
tr
tf
100
ton
tr
tf
10
0
100 200 300
Collector current : Ic [ A ]
400
10000
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 25°C
1000
100
toff
ton
tr
tf
10
1.0
10.0
Gate resistance : Rg [ ]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=225A, VGE=±15V, Tj= 125°C
150
Eon
100
Eoff
50
Err
0
1 10
Gate resistance : Rg [ ]
100
10
0
100 200 300
Collector current : Ic [ A ]
400
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=3
120
Eoff(125°C)
100
Eoff(25°C)
80 Eon(125°C)
Err(125°C)
60
Err(25°C)
40 Eon(25°C)
20
0
0 100 200 300 400 500
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 3,Tj <= 125°C
Stray inductance <= 100nH
600
450
300
150
0
0 300 600 900 1200 1500 1800
Collector - Emitter voltage : VCE [ V ]










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Номер в каталогеОписаниеПроизводители
6MBI225U-170IGBT Module U-Series 1700V / 225A 6 in one-packageFE
FE

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