CPH6526 PDF даташит
Спецификация CPH6526 изготовлена «Sanyo Semicon Device» и имеет функцию, называемую «Low Frequency General Purpose AMplifier». |
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Детали детали
Номер произв | CPH6526 |
Описание | Low Frequency General Purpose AMplifier |
Производители | Sanyo Semicon Device |
логотип |
5 Pages
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5Ordering number : ENN7453
CPH6526
PNP/NPN Epitaxial Planar Silicon Composite Transistors
CPH6526
Low-Frequency General-Purpose
Amplifier Applications
Features
• Composite type with 2 transistors contained in the
CPH package currently in use, improving the mount-
ing efficiency greatly.
• The CPH6526 is formed with two chips, being
equivalent to the 2SA1622 / 2SC4211, placed in one
package.
Package Dimensions
unit : mm
2187
2.9
6 54
[CPH6526]
0.15
0.05
Specifications
( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Marking : 3R
Symbol
ICBO
IEBO
hFE
Conditions
1unit
Conditions
VCB=(--)35V, IE=0
VEB=(--)4V, IC=0
VCE=(--)6V, IC=(--)1mA
12 3
0.95
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
0.4 6 : Collector1
SANYO : CPH6
Ratings
(--)55
(--)50
(--)6
(--)150
(--)300
(--)30
350
500
150
--55 to +150
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
min
160
Ratings
typ
max
Unit
(--)0.1
µA
(--)0.1
µA
600
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-100414 No.7453-1/5
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CPH6526
Continued from preceding page.
Parameter
Symbol
Conditions
Gain-Bandwidth Product
fT VCE=(--)6V, IC=(--)10mA
Output Capacitance
Cob VCB=(--)6V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(--)50mA, IB=(--)5mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(--)50mA, IB=(--)5mA
Collector-to-Base Breakdown Voltage
V(BR)CBO IC=(--)10µA, IE=0
Collector-to-Emitter Breakdown Voltage
V(BR)CEO IC=(--)1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=(--)10µA, IC=0
Turn ON Time
ton See specified Test Circuit.
Storage Time
tstg See specified Test Circuit.
Fall Time
tf See specified Test Circuit.
Note : The specifications shown above are for each individual transistor.
Ratings
min typ
(180)200
(2.9)1.7
(--0.11)0.08
(--)0.8
(--)55
(--)50
(--)6
0.15
(0.60)0.75
0.20
max
(--)0.4
(--)1.0
Unit
MHz
pF
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
PW=20µs
D.C.≤1%
IB1
IB2
INPUT
VR RB
50Ω
+
220µF
VBE= --5V
IC=10IB1= --10IB2=10mA
For PNP, the polarity is reversed.
OUTPUT
RL=2kΩ
+
470µF
VCC=20V
Electrical Connection
654
TR2
TR1
123
TR1=PNP
TR2=NPN
(Top view)
--50
IC -- VCE
[TR1]
--40 --450µA --400µA --350µA
--300µA
--250µA
--200µA
--30 --150µA
--20 --100µA
--50µA
--10
0 IB=0
0 --0.2 --0.4 --0.6 --0.8 --1.0
Collector-to-Emitter Voltage, VCE -- V IT04700
IC -- VCE
[TR1]
--14
--12 --50µ--A45µA
--10 --40µA
--35µA
--8 --30µA
--25µA
--6 --20µA
--15µA
--4
--10µA
--2 --5µA
0 IB=0
0 --10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE -- V IT04702
IC -- VCE
[TR2]
50
350µA
300µA
40 250µA
200µA
30
150µA
20 100µA
10 50µA
0 IB=0
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE -- V IT04699
IC -- VCE
[TR2]
12
10 50µA
45µA
8 40µA
35µA
6 30µA
25µA
20µA
4
15µA
10µA
2
5µA
0 IB=0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE -- V IT04701
No.7453-2/5
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--160
--140
--120
--100
--80
--60
--40
--20
0
0
1000
7
5
3
2
IC -- VBE
CPH6526
[TR1]
VCE= --6V
160
140
120
100
80
60
40
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE -- V IT04704
hFE -- IC
[TR1]
VCE= --6V
Ta=75°C 25°C
--25°C
20
0
0
1000
7
5
3
2
IC -- VBE
[TR2]
VCE=6V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT04703
hFE -- IC
[TR2]
VCE=6V
Ta=75°C
25°C
--25°C
100
7
5
3
--0.1 2 3 5 --1.0 2 3 5 --10 2 3 5 --100 2 3
Collector Current, IC -- mA
IT04706
fT -- IC
[TR1]
1000
VCE= --6V
7
5
3
2
100
7
5
3
0.1 2 3 5 1.0 2 3 5 10 2 3 5 100 2
Collector Current, IC -- mA
IT04705
fT -- IC
[TR2]
1000
VCE=6V
7
5
3
2
100
7
5
3
2
--1.0
2
2 3 5 7 --10
2 3 5 7 --100
2
Collector Current, IC -- mA
IT04708
Cib -- VEB
[TR1]
f=1MHz
100
7
5
3
2
1.0
2
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC -- mA
IT04707
Cib -- VEB
[TR2]
f=1MHz
10 10
77
55
33
22
1.0
5 7 --1.0
23
57
Emitter-to-Base Voltage, VEB -- V IT04710
1.0
5 7 1.0
23
57
Emitter-to-Base Voltage, VEB -- V IT04709
No.7453-3/5
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