CPH5857 Datasheet PDF - Sanyo Semicon Device
| Part Number | CPH5857 | |
| Description | P-Channel Silicon MOSFET | |
| Manufacturers | Sanyo Semicon Device | |
| Logo |  |
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Ordering number : ENA0547
CPH5857
SANYO Semiconductors
DATA SHEET
CPH5857
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
• Junction temperature 150°C guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : YK
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--20
±10
--1.5
--6.0
0.9
150
--55 to +150
V
V
A
A
W
°C
°C
15
15
1
3
--55 to +150
--55 to +150
V
V
A
A
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2006PE TI IM TC-00000405 No. A0547-1/6
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CPH5857
IF -- VF
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.1 0.2 0.3 0.4 0.5
Forward Voltage, VF -- V
PF(AV) -- IO
0.7
Rectangular
wave
(1)
0.6
0.6 0.7
IT11204
(2) (4) (3)
θ
0.5 360°
Sine wave
0.4
180°
0.3 360°
0.2
(1)Rectangular wave θ=60°
0.1 (2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Output Current, IO -- A IT11206
Tc -- IO
160
(1)Rectangular wave θ=60°
140 (2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
120 (4)Sine wave θ=180°
*When mounted in reliability
100 operaion board,
Rth(J-a)=183.67°C/W
80
60
Rectangular
wave
θ
(4)
40
Sine
20 wave
360°
180°
(1) (2)
(3)
0 360°
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Output Current, IO -- A IT11208
IFSM -- t
[SBD]
3.5
Current waveform 50Hz sine wave
3.0 IS
2.5 20ms
t
2.0
10000
1000
100
10
1.0
IR -- VR
Ta=150°C
125°C
100°C
75°C
50°C
25°C
0.1 0°C
0.01
0.001
--25°C
0.0001
0 2 4 6 8 10 12
Reverse Voltage, VR -- V
PR(AV) -- VRM
1.2E--0.5
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
1.0E--0.5 (3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Rectangular
8.0E--0.6 wave
θ
VR
6.0E--0.6
360°
Sine wave
4.0E--0.6
2.0E--0.6
180°
360°
VR
14 16
IT11205
(1)
(2)
(3)
(4)
0.0E+00
0
5
3
2
2 4 6 8 10 12 14 16
Peak Reverse Voltage, VRM -- V
C -- VR
IT11207
100
7
5
3
2
10
0.1
23
5 7 1.0
2 3 5 7 10
Reverse Voltage, VR -- V
23
IT10275
1.5
1.0
0.5
0
7 0.01 2 3
5 7 0.1 2 3
Time, t -- s
5 7 1.0
23
ID00338
No. A0547-5/6
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CPH5857 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CPH5857.PDF Datasheet ] | |
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