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PDF CPH5854 Data sheet ( Hoja de datos )
| Número de pieza | CPH5854 | |
| Descripción | P-Channel Silicon MOSFET | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CPH5854 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Ordering number : ENA0516
CPH5854
SANYO Semiconductors
DATA SHEET
CPH5854
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3),
facilitating high-density mounting.
• [MOS]
• Low ON-resistance
• Ultrahigh-speed switching
• 4V drive
• [SBD]
• Short reverse recovery time
• Low forward voltage
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : YG
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm2!0.8mm) 1unit
50Hz sine wave, 1cycle
Ratings
Unit
--30
±20
--2
--8
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
30
35
1
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90606PE MS IM TC-000001G63I INMo. A0516-1/6
1 page  
CPH5854
IF -- VF
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Forward Voltage, VF -- V
PF(AV) -- IO
0.8
Rectangular
wave
0.7
IT09553
θ
0.6 360°
(1) (2) (4)(3)
0.5 Sine wave
0.4 180°
360°
0.3
0.2 (1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
0.1 (3)Rectangular wave θ=180°
0 (4)Sine wave θ=180°
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Output Current, IO -- A IT09555
IFSM -- t
14
Current waveform 50Hz sine wave
12 IS
10 20ms
t
8
10000
5
1000
5
100
5
10
5
1.0
5
0.1
5
0.01
5
0.001
5
0.0001
0
3
2
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
0°C
--25°C
5 10 15 20 25 30 35
Reverse Voltage, VR -- V
C -- VR
IT09554
100
7
5
3
2
10
7
0.1
2 3 5 7 1.0 2 3 5 7 10
Reverse Voltage, VR -- V
23 5
IT09556
6
4
2
0
7 0.01
23
5 7 0.1 2 3
Time, t -- s
5 7 1.0
23
ID00435
No. A0516-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CPH5854.PDF ] | |
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