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PDF CPH5811 Data sheet ( Hoja de datos )
| Número de pieza | CPH5811 | |
| Descripción | DC / DC Converter Applications | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENN8234
CPH5811
CPH5811
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Features
• Composite type with an N-Channel Sillicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS004)
contained in one package facilitating high-density mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V driver
[SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QM
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm2!0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
20
±10
3
12
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
15
15
1
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22805PE TS IM TB-00001212 No.8234-1/6
1 page  
CPH5811
IF -- VF
[SBD]
3
2
1.0
7
5
3
Ta=125°C
25°C
2
0.1
7
5
3
2
0.01
0
0.1 0.2 0.3 0.4
Forward Voltage, VF -- V
PF(AV) -- IO
0.8
(1)Rectangular wave θ=60°
0.7 (2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
0.6 (4)Sine wave θ=180°
0.5 (1) (2) (4) (3)
0.5
IT00622
[SBD]
Rectangular
0.4 wave
0.3 θ
360°
0.2 Sine wave
0.1 180°
360°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Average Forward Current, IO -- A IT00624
12
IFSM -- t
[SBD]
Current waveform 50Hz sine wave
10 Is
20ms
8t
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
1.0
6
4
2
0
7 0.01
23
5 7 0.1 2 3
Time, t -- s
5 7 1.0
23
IT00626
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
[SBD]
5 10
Reverse Voltage, VR -- V
C -- VR
15
IT00623
[SBD]
f=1MHz
23
5 7 10
Reverse Voltage, VR -- V
2
IT00625
No.8234-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CPH5811.PDF ] | |
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