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CPH3248 PDF даташит

Спецификация CPH3248 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «NPN Epitaxial Planar Silicon Transistor».

Детали детали

Номер произв CPH3248
Описание NPN Epitaxial Planar Silicon Transistor
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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CPH3248 Даташит, Описание, Даташиты
www.DataSheet4U.com
Ordering number : ENA0401
CPH3248
SANYO Semiconductors
DATA SHEET
CPH3248
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Applications
DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters.
Features
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm).
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Mounted on a ceramic board (600mm2!0.8mm)
Ratings
120
120
100
6.5
2
3
400
0.9
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
°C
°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : DT
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=80V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=300mA
VCB=10V, f=1MHz
min
300
Ratings
typ
max
Unit
1 µA
1 µA
600
300 MHz
13 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 60506EA MS IM TB-00002344 No. A0401-1/4









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CPH3248 Даташит, Описание, Даташиты
CPH3248
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0
IC=1mA, RBE=
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
120
120
100
6.5
Ratings
typ
90
0.85
40
1100
40
max
150
1.2
Unit
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7015A-003
2.9
3
1
0.95
2
0.4
0.15
0.05
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT VR10
IB1
IB2
RB
50
+
100µF
VBE= --5V
10IB1= --10IB2=IC=0.5A
OUTPUT
RL
+
470µF
VCC=50V
IC -- VCE
2.0
80mA
60mA
1.6 40mA
1.2 20mA
10mA
0.8
5mA
2mA
0.4
0 IB=0mA
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE -- V IT11013
2.0
VCE=5V
1.8
IC -- VBE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT11014
No. A0401-2/4









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CPH3248 Даташит, Описание, Даташиты
CPH3248
1000
7
5
3
2
hFE -- IC
Ta=75°C
25°C
--25°C
VCE=5V
100
7
5
3
2
0.01 2 3 5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC -- A
IT11015
VCE(sat) -- IC
5
IC / IB=20
3
2
VCE(sat) -- IC
3
IC / IB=10
2
0.1
7
5
3
Ta=75°C
25°C
2 --25°C
0.01
7
0.01 2 3 5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC -- A
IT11016
VBE(sat) -- IC
3
IC / IB=10
2
0.1
7 25°C
5
3
Ta=75°C--25°C
2
0.01
7
0.01
7
5
23
5 7 0.1
2 3 5 7 1.0
Collector Current, IC -- A
fT -- IC
23
IT11017
VCE=10V
3
2
100
7
5
3
2
0.01 2 3
7
5 ICP=3A
3
2
IC=2A
1.0
7
5
3
2
0.1
7
5
3
2
5 7 0.1
23 5
Collector Current, IC -- A
ASO
1ms
DC ope1r0a0timons 10ms
7 1.0
2
IT11019
<10µs
0.01
7
5 Ta=25°C
3
2
0.001
Single pulse
Mounted on a ceramic board (600mm2!0.8mm)
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
2
Collector-to-Emitter Voltage, VCE -- V IT11021
1.0 Ta= --25°C 25°C
7 75°C
5
3
0.01 2 3 5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC -- A
IT11018
Cob -- VCB
7
f=1MHz
5
3
2
10
7
5
3
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V
PC -- Ta
5 7 100
IT11020
Mounted on a ceramic board (600mm 2!0.8mm)
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11003
No. A0401-3/4










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