STK14C88-3 PDF Datasheet

Спецификация STK14C88-3 изготовлена «Simtek» и имеет функцию, называемую «32Kx8 AutoStore nvSRAM». На этой странице представлена подробная информация о характеристиках и технических характеристиках детали. Если вы правильно понимаете эти части, они могут помочь вам завершить ваши проекты и отремонтировать детали.

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Номер произв	STK14C88-3
Описание	32Kx8 AutoStore nvSRAM
Производители	Simtek
логотип

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FEATURES

• 35, 45 ns Read Access & R/W Cycle Time

• Unlimited Read/Write Endurance

• Automatic Non-volatile STORE on Power Loss

• Non-Volatile STORE Under Hardware or

Software Control

• Automatic RECALL to SRAM on Power Up

• Unlimited RECALL Cycles

• 1 Million STORE Cycles

• 100-Year Non-volatile Data Retention

• Single 3.3V ± 10% Power Supply

• Commercial and Industrial Temperatures

• 32-Pin 300 mil SOIC and 600 mil PDIP Pack-

ages (RoHS-Compliant)

STK14C88-3

32Kx8 AutoStore nvSRAM

DESCRIPTION

The Simtek STK14C88-3 is a 256Kb fast static RAM

with a non-volatile Quantum Trap storage element

included with each memory cell.

The SRAM provides the fast access & cycle times,

ease of use and unlimited read & write endurance of

a normal SRAM.

Data transfers automatically to the non-volatile stor-

age cells when power loss is detected (the STORE

operation). On power up, data is automatically

restored to the SRAM (the RECALL operation). Both

STORE and RECALL operations are also available

under software control.

The Simtek nvSRAM is the first monolithic non-vola-

tile memory to offer unlimited writes and reads. It is

the highest performance, most reliable non-volatile

memory available.

BLOCK DIAGRAM

A 11

A 12

A 13

A 14

DQ 0

DQ 1

DQ 2

DQ 3

DQ 4

DQ 5

DQ 6

DQ 7

Quatum Trap

512 X 512

STATIC RAM

ARRAY

512 X 512

STORE

RECALL

COLUMN I/O

COLUMN DEC

A 0 A 1 A 2 A 3 A 4 A10

VCCX

VCAP

POWER

CONTROL

STORE/

RECALL

CONTROL

HSB

SOFTWARE

DETECT

A13 – A 0

This product conforms to specifications per the

terms of Simtek standard warranty. The product

has completed Simtek internal qualification testing

and has reached production status.

1 Document Control #ML0015 Rev 0.6

February 2007

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STK14C88-3

VCAP

A14

A 12

DQ0

DQ1

DQ2

VSS

Portagee

Joe

VCCX

HSB

A13

A 11

A 10

DQ7

DQ6 32-Pin SOIC

DQ5

DQ4 32-Pin PDIP

DQ3

PIN DESCRIPTIONS

Pin Name

A14-A0

DQ7-DQ0

Input

I/O

Input

I/O

G Input

VCCX

HSB

Power Supply

I/O

VCAP

VSS

Power Supply

Description

Address: The 15 address inputs select one of 32,768 bytes in the nvSRAM array

Data: Bi-directional 8-bit data bus for accessing the nvSRAM

Chip Enable: The active low E input selects the device

Write Enable: The active low W enables data on the DQ pins to be written to the address

location latched by the falling edge of E

Output Enable: The active low G input enables the data output buffers during read cycles.

De-asserting G high caused the DQ pins to tri-state.

Power: 3.3V, ± 10%

Hardware Store Busy: When low this output indicates a Store is in progress. When pulled

low external to the chip, it will initiate a nonvolatile STORE operation. A weak pull up resistor

keeps this pin high if not connected. (Connection Optional).

AutoStore Capacitor: Supplies power to nvSRAM during power loss to store data from

SRAM to nonvolatile storage elements.

Ground

Document Control #ML0015 Rev 0.6

February 2007

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ABSOLUTE MAXIMUM RATINGSa

Voltage on Input Relative to Ground . . . . . . . . . . . . . –0.5V to 7.0V

Voltage on Input Relative to VSS. . . . . . . . . . –0.6V to (VCC + 0.5V)

Voltage on DQ0-7 or HSB . . . . . . . . . . . . . . . –0.5V to (VCC + 0.5V)

Temperature under Bias . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C

Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

DC Output Current (1 output at a time, 1s duration) . . . . . . . 15mA

STK14C88-3

Note a:

Stresses greater than those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. This is a

stress rating only, and functional operation of the device at con-

ditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rat-

ing conditions for extended periods may affect reliability.

DC CHARACTERISTICS

(VCC = 3 - 3.6V)e

SYMBOL

ICC1b

ICC2c

ICC3b

ICC4c

ISB1d

ISB2d

IILK

IOLK

VIH

VIL

VOH

VOL

VBL

VCC

VCAP

NVC

DATAR

PARAMETER

Average VCC Current

Average VCC Current during STORE

Average VCC Current at tAVAV = 200ns

5V, 25°C, Typical

Average VCAP Current during AutoStore

Cycle

Average VCC Current

(Standby, Cycling TTL Input Levels)

VCC Standby Current

(Standby, Stable CMOS Input Levels)

Input Leakage Current

COMMERCIAL

MIN MAX

±1

INDUSTRIAL

MIN MAX

±1

Off-State Output Leakage Current

±1 ±1

Input Logic “1” Voltage

Input Logic “0” Voltage

Output Logic “1” Voltage

Output Logic “0” Voltage

Logic “0” Voltage on HSB Output

Operating Temperature

Operating Voltage

Storage Capacitor

Nonvolatile STORE operations

Data Retention

2.2

VSS – .5

2.4

3.0

1,000

100

VCC + .5

0.8

0.4

3.6

264

2.2

VSS – .5

2.4

- 40

3.0

1,000

100

VCC + .5

0.8

0.4

3.6

264

UNITS

μA

°C

μF

Years

NOTES

tAVAV = 35ns

tAVAV = 45ns

All Inputs Don’t Care, VCC = max

W ≥ (V CC– 0.2V)

All Others Cycling, CMOS Levels

All Inputs Don’t Care

tAVAV = 35ns, E ≥ VIH

tAVAV = 45ns, E ≥ VIH

E ≥ (V CC – 0.2V)

All Others VIN ≤ 0.2V or ≥ (VCC – 0.2V)

VCC = max

VIN = VSS to VCC

VCC = max

VIN = VSS to VCC, E or G ≥ VIH

All Inputs

IOUT = – 4mA except HSB

IOUT = 8mA except HSB

IOUT = 3mA

3.3V ± 0.3V

68 to 220μF ± 20%, 4.7v Rated

@55 °C

Note b:

Note c:

Note d:

Note e:

ICC1 and ICC3 are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.

CC2 and ICC4 are the average currents required for the duration of the respective STORE cycles (tSTORE ) .

E ≥ VIH will not produce standby current levels until any nonvolatile cycle in progress has timed out.

VCC reference levels throughout this datasheet refer to VCCX if that is where the power supply connection is made, or VCAP if VCCX is connected

to ground.

Document Control #ML0015 Rev 0.6

February 2007

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