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ST3403 PDF даташит
| Спецификация ST3403 изготовлена «Stanson Technology» и имеет функцию, называемую «P Channel Enchancement Mode MOSFET». |
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Детали детали
| Номер произв | ST3403 |
| Описание | P Channel Enchancement Mode MOSFET |
| Производители | Stanson Technology |
| логотип |  |
7 Pages
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P Channel Enchancement Mode MOSFET
-3.5A
ST3403
DESCRIPTION
The ST3403 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
12
1.Gate 2.Source 3.Drain
3
A3YA
12
Y: Year Code A: Process Code
FEATURE
-30V/-2.8A, RDS(ON) = 105m-ohm
@VGS = -10V
-30V/-2.5A, RDS(ON) = 115m-ohm
@VGS = -4.5V
-30V/-1.5A, RDS(ON) = 155m-ohm
@VGS = -2.5V
RDS(ON) =255m-ohm
@VGS = -1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum
DC current capability
SOT-23-3L package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1
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P Channel Enchancement Mode MOSFET
-3.5A
ST3403
ABSOLUTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150 ) TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
TA=25
TA=70
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
R JA
Typical
-30
+/-12
-3.5
-2.8
-20
-1.4
1.25
0.81
150
-55/150
105
Unit
V
V
A
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
No Preview Available ! |
P Channel Enchancement Mode MOSFET
-3.5A
ST3403
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=-250uA -0.4
Gate Leakage Current
IGSS VDS=0V,VGS= 12V
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
ID(on)
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=85
VDS -5V,VGS=-4.5V
-4
V
-1.0 V
100 nA
-1
-5 uA
A
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
RDS(on)
gfs
VSD
VGS=-10V,ID=-2.8A
VGS=-4.5V,ID=-2.5A
VGS=-2.5V,ID=-1.5A
VGS=-1.8V,ID=-1.0A
VDS=-10V,ID=-2.8A
IS=-1.2A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-4.5V
ID -2.0A
VDS=-15V,VGS=0V
F=1MHz
VDD=-15V,RL=15
VGEN=-10V,RG=3
ID -1.0A
0.09 0.105
0.100 0.115
0.140 0.155
0.200 0.255
4
S
-0.8 -1.2 V
5.8
0.8 nC
1.5
380
55 pF
40
6
3.9 nS
40
15
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 3
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