2847 PDF даташит
Спецификация 2847 изготовлена «Toshiba» и имеет функцию, называемую «2SK2847». |
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Детали детали
Номер произв | 2847 |
Описание | 2SK2847 |
Производители | Toshiba |
логотип |
6 Pages
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2SK2847
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2847
DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance
: RDS (ON) = 1.1 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 7.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
8
24
85
799
8
8.5
150
−55 to 150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
—
JEITA
—
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
1.47 °C / W
41.6 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 22.9 mH, RG = 25 Ω, IAR = 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Start of commercial production
1996-06
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 4 A
VDS = 15 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turn−on time
Fall time
ton
tf
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
toff
Qg
Qgs VDD ≈ 400 V, VGS = 10 V, ID = 8 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 8 A, VGS = 0 V
IDR = 8 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK2847
Min Typ. Max Unit
— — ±10
±30 —
—
— — 100
900 —
—
2.0 — 4.0
— 1.1 1.4
3.0 7.0
—
— 2040 —
— 45 —
— 190 —
μA
V
μA
V
V
Ω
S
pF
— 25 —
— 60 —
ns
— 20 —
— 95 —
— 58 —
— 32 — nC
— 26 —
Min Typ. Max Unit
—— 8 A
— — 24 A
— — −1.9 V
— 1650 —
ns
— 21 — μC
TOSHIBA
K2847
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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