BF1212 PDF даташит
Спецификация BF1212 изготовлена «NXP Semiconductors» и имеет функцию, называемую «N-channel dual-gate MOS-FETs». |
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Детали детали
Номер произв | BF1212 |
Описание | N-channel dual-gate MOS-FETs |
Производители | NXP Semiconductors |
логотип |
15 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1212; BF1212R; BF1212WR
N-channel dual-gate MOS-FETs
Product specification
2003 Nov 14
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
FEATURES
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier
• Excellent low frequency noise performance
• Partly internal self-biasing circuit to ensure good
cross-modulation performance during AGC and good
DC stabilization.
PINNING
PIN
1
2
3
4
source
drain
gate 2
gate 1
DESCRIPTION
APPLICATIONS
• Gain controlled low noise VHF and UHF amplifiers for
5 V digital and analog television tuner applications.
DESCRIPTION
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1212, BF1212R and BF1212WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
handbook, 2 c4olumns
3
1
Top view
2
MSB014
BF1212; marking code: LGp
Fig.1 Simplified outline (SOT143B).
handbook, 2 co3lumns
4
handbook, halfpage
3
4
21
Top view
MSB035
BF1212R; marking code: LKp
Fig.2 Simplified outline (SOT143R).
2
Top view
1
MSB842
BF1212WR; marking code: ML
Fig.3 Simplified outline (SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Xmod
cross-modulation
Tj junction temperature
2003 Nov 14
CONDITIONS
f = 1 MHz
f = 800 MHz
input level for k = 1 % at
40 dB AGC
2
MIN.
−
−
−
28
−
−
−
100
TYP.
−
−
−
33
1.7
15
1.1
104
MAX.
6
30
180
43
2.2
30
1.8
−
UNIT
V
mA
mW
mS
pF
fF
dB
dBµV
− − 150 °C
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
ORDERING INFORMATION
TYPE NUMBER
BF1212
BF1212R
BF1212WR
NAME
−
−
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
VERSION
SOT143B
SOT143R
SOT343R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VDS drain-source voltage
ID drain current (DC)
IG1 gate 1 current
IG2 gate 2 current
Ptot total power dissipation
BF1212; BF1212R
BF1212WR
Tstg storage temperature
Tj junction temperature
Ts ≤ 116 °C; note 1
Ts ≤ 122 °C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
MIN.
−
−
−
−
MAX.
6
30
±10
±10
UNIT
V
mA
mA
mA
− 180 mW
− 180 mW
−65
+150
°C
− 150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
BF1212; BF1212R
BF1212WR
VALUE
185
155
UNIT
K/W
K/W
2003 Nov 14
3
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