BF1210 PDF даташит
Спецификация BF1210 изготовлена «NXP Semiconductors» и имеет функцию, называемую «Dual N-channel dual gate MOSFET». |
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Детали детали
Номер произв | BF1210 |
Описание | Dual N-channel dual gate MOSFET |
Производители | NXP Semiconductors |
логотип |
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BF1210
Dual N-channel dual gate MOSFET
Rev. 01 — 25 October 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
I Superior cross modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio
1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
VDS
ID
Ptot
|yfs|
Ciss(G1)
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
DC
Tsp ≤ 107 °C
amplifier A; ID = 19 mA
amplifier B; ID = 13 mA
f = 100 MHz
amplifier A
amplifier B
Crss reverse transfer capacitance f = 100 MHz
NF noise figure
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod cross modulation
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
Tj junction temperature
[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
Min Typ Max Unit
- - 6V
- - 30 mA
[1] - - 180 mW
26 31 41 mS
28 33 43 mS
[2]
- 2.2 2.7 pF
- 1.9 2.4 pF
[2] -
20 -
fF
- 0.9 1.5 dB
- 1.2 1.9 dB
100 105 - dBµV
100 103 - dBµV
- - 150 °C
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline Symbol
654
G1A
AMP A
DA
123
G2 S
G1B
DB
AMP B
sym119
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BF1210
-
plastic surface-mounted package; 6 leads
Version
SOT363
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
4. Marking
Table 4. Marking
Type number
BF1210
Marking
*AB
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per MOSFET
VDS drain-source voltage
ID drain current
IG1 gate1 current
IG2 gate2 current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
DC
Tsp ≤ 107 °C
-
-
-
-
[1] -
−65
-
[1] Tsp is the temperature at the soldering point of the source lead.
Max
6
30
±10
±10
180
+150
150
Unit
V
mA
mA
mA
mW
°C
°C
250
Ptot
(mW)
200
150
100
50
0
0
Fig 1. Power derating curve
50
001aac193
100 150 200
Tsp (˚C)
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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