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BB179B PDF даташит

Спецификация BB179B изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «UHF variable capacitance diode».

Детали детали

Номер произв BB179B
Описание UHF variable capacitance diode
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BB179B Даташит, Описание, Даташиты
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB179B
UHF variable capacitance diode
Product specification
1997 Nov 13









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BB179B Даташит, Описание, Даташиты
www.DataSheet4U.com
Philips Semiconductors
Product specification
UHF variable capacitance diode
FEATURES
Excellent linearity
Excellent matching to 2% DMA
Ultra small plastic SMD package
DESCRIPTION
The BB179B is a planar technology
variable capacitance diode, in a
SOD523 (SC-79) package. The
excellent matching performance is
handboo1k, 2 columns
C28: 2.1 pF; ratio: 9
achieved by gliding matching and a
Low series resistance.
direct matching assembly procedure.
BB179B
2
MBK441
APPLICATIONS
Electronic tuning in UHF television
tuners
Voltage controlled oscillators
(VCO).
PINNING
PIN DESCRIPTION
1 cathode
2 anode
Marking code: C.
Orientation of marking code as shown.
Cathode side indicated by a bar.
Fig.1 Simplified outline
(SOD523; SC-79) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VR continuous reverse voltage
VRM peak reverse voltage
in series with a 10 kresistor
IF continuous forward current
Tstg storage temperature
Tj operating junction temperature
MIN.
55
55
MAX.
32
35
20
+150
+125
UNIT
V
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
IR reverse current
rs diode series resistance
Cd diode capacitance
CC-----dd----((--12--VV----))
C--C---d-d---(-(-2-1-8--V-V--)-)-
CC-----dd----((--22--58---VV---))-
--C--C---d--d-
capacitance ratio
capacitance ratio
capacitance ratio
capacitance matching
1997 Nov 13
CONDITIONS
MIN.
VR = 30 V; see Fig.3
VR = 30 V; Tj = 85 °C; see Fig.3
f = 470 MHz;
VR is the value at which Cd = 9 pF
VR = 1 V; f = 1 MHz; see Figs 2 and 4
18.22
VR = 28 V; f = 1 MHz; see Figs 2 and 4 1.9
f = 1 MHz
TYP.
0.6
1.27
MAX. UNIT
10 nA
200 nA
0.75
20 pF
2.25 pF
f = 1 MHz
8.45
10
f = 1 MHz
1.05
VR = 1 to 28 V; in a sequence of 15 − − 2 %
diodes (gliding)
2









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BB179B Даташит, Описание, Даташиты
www.DataSheet4U.com
Philips Semiconductors
UHF variable capacitance diode
Product specification
BB179B
GRAPHICAL DATA
handbook,2f4ull pagewidth
Cd
(pF)
20
MBK440
16
12
8
4
0
10 1
1
10 VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10 2
handboo1k,0h3alfpage
IR
(nA)
102
MLC816
handboo1k0,
3
halfpage
TC d
(K1)
10 4
MLC815
10
0
50
T j (oC)
100
Fig.3 Reverse current as a function of junction
temperature; maximum values.
1997 Nov 13
10
5
10
1
1
10 VR (V) 102
Tj = 0 to 85 °C.
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
3










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