MAPLST2122-015CF PDF даташит
Спецификация MAPLST2122-015CF изготовлена «Tyco Electronics» и имеет функцию, называемую «RF Power Field Effect Transistor». |
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Детали детали
Номер произв | MAPLST2122-015CF |
Описание | RF Power Field Effect Transistor |
Производители | Tyco Electronics |
логотип |
5 Pages
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RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 15W, 28V
8/20/03
Preliminary
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
Q 15W Output Power at P1dB (CW)
Q 12dB Minimum Gain at P1dB (CW)
Q W-CDMA Typical Performance:
(28VDC, -45dBc ACPR, 5MHz offset,
4.096MHz BW)
Q Output Power: 2.2W (typ.)
Q Gain: 13dB (typ.)
Q Efficiency: 17% (typ.)
Q 10:1 VSWR Ruggedness (CW @ 15W,
28V, 2110MHz)
Package Style
MAPLST2122-015CF
Maximum Ratings
Drain—Source Voltage
Gate—Source Voltage
Parameter
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
20
54.7
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
3.2
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
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RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA
MAPLST2122-015CF
8/20/2003
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown VoClthaagreacteristic
OFF(VCGHSA=R0AVCdTcE,RIDIS=T2IC0SµAdc)
Zero Gate Voltage Drain Leakage Current
(VDDSS = 6258 Vdc, VGGSS = 0)
ZGeartoe((VV—GDGaSSStoe==uV25rc6oVeltVdaLdcgec,ea,VkDVDarGSgaS=ein=0CL0)ue)rarekangt e Current
GGaattee((V—VTGdhSsSro==eus25rhc8oVeVlddLdceVc,a,oVkIlDdtaaS=gg=ee10Cm)uArr)ent
Gate Quiescent Voltage
ON C(VHdAs =RA28CTVEdcR,ISIdT=IC2S50 mA)
Drain-Source On-Voltage
(Vgs = 10 Vdc, Id = 1 A)
Forward Transconductance
(Vgs = 10 Vdc, Id = 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
DReYvNerAseMTrIaCnsCfeHr ACaRpAacCitaTnEcRe ISTICS (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (2)
Two-Tone Common-Source Amplifier Power Gain
FUN(VCDTS =IO2N8 AVdLc,TPEOUSTT=S1(5InWMPE/AP.-CIDOQ =M15T0emstAF,ixture) (2)
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Third Order Intermod
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Two-Tone Third Order Intermod
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Input Return Loss
(VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA,
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Output VSWR Tolerance
(VDD = 28 Vdc, Pout = 30 W, IDQ = 250 mA, f = 2110 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Symbol Min
Typ
Max
Unit
SyVm(BbRo)DlSS Mi6n5
Typ—
Ma—x
UnVidt c
IDSIDSSS
——
IDSIGSSS
IGVSGSS(th)
VDS(Q)
——
—2.5
2.5
VDS(on)
—
Gm —
——
——
—3.0
3.5
0.2
1.0
101 µAµdAcdc
1 1 µAµdAcdc
14.0 µAVddcc
4.5 Vdc
— Vdc
—S
Crss
—
0.9
—
pF
Gps 12 12.8 —
dB
EFF (ŋ) — 32 — %
IMD — -30 — dBc
IRL — -12 — dB
Gps 12 12.8 —
dB
EFF (ŋ) — 32 — %
IMD — -30 — dBc
IRL — -12 -10 dB
Ψ No Degradation In Output Power
Before and After Test
2
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RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA
MAPLST2122-015CF
8/20/2003
Preliminary
C1,C5 Tantalum Electrolytic Surface Mt. Cap., 100 µF
C2,C6 Ceramic Chip Capacitor, 0.1 µF
C3,C7 Ceramic Chip Capacitor, 1000 pF
C4,C8,C10,C15 Chip Capacitor, 8.2 pF ATC100B
C9 Chip Capacitor, 1.5 pF ATC100B
C11,C12 Chip Capacitor, 0.1 pF ATC100B
C13,C14 Chip Capacitor, 0.7 pF ATC100B
C16 Chip Capacitor, 0.5 pF ATC100B
Z1-Z9 Distributed Microstrip Element
J1,J2 SMA Connector, Omni Spectra 2052-5636-02
L1 Inductor, 8 nH, CoilCraft A03T
L2 Inductor, 18.5 nH, CoilCraft A05T
P1,P2 Connector, AMP 640457-4
Q1 Transistor, MAPLST2122-015WF
R1 Chip Resistor (0805), 100k Ohm
R2 Chip Resistor (0805), 1K Ohm
PC Board Taconix (TLX-8) Woven Glass Teflon
Teflon .031” Thick, Er=2.55, 1 Oz Copper
Both Sides
Figure 1. 2110—2170 MHz Test Fixture Schematic
Figure 2. 2110—2170 MHz Test Fixture Component Layout
3
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Номер в каталоге | Описание | Производители |
MAPLST2122-015CF | RF Power Field Effect Transistor | Tyco Electronics |
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