2SD2226K PDF даташит
Спецификация 2SD2226K изготовлена «ROHM Semiconductor» и имеет функцию, называемую «(2SD2xxx) General Purpose Transistor (50V/ 0.15A)». |
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Детали детали
Номер произв | 2SD2226K |
Описание | (2SD2xxx) General Purpose Transistor (50V/ 0.15A) |
Производители | ROHM Semiconductor |
логотип |
4 Pages
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Transistors
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
General Purpose Transistor (50V, 0.15A)
2SD2707 /2SD2654 /2SD2351 /2SD2226K /2SD2227S
zFeatures
1) High DC current gain.
2) High emitter-base voltage. (VCBO=12V)
3) Low saturation voltage.
(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD2654, 2SD2707
2SD2351, 2SD2226K
2SD2227S
Junction temperature
Storage temperature
∗Single pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
50
12
0.15
0.2
0.15
0.2
0.3
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse)∗
W
°C
°C
zExternal dimensions (Unit : mm)
2SD2707
ROHM : EMT3
2SD2654
1.2
0.2 0.8 0.2
(2)
(3)
(1)
(1)
(3) (2)
0.8
1.6
(1) Base
(2) Emitter
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
0.1Min.
2SD2351
(1) Emitter
(2) Base
(3) Collector
zPackaging specifications and hFE
Type
package
hFE
Marking
Code
Basic ordering unit (pleces)
∗ Denotes hFE
2SD2707
VMT3
VW
BJ∗
T2L
8000
2SD2654
EMT3
VW
BJ∗
TL
3000
2SD2351
UMT3
VW
BJ∗
T106
3000
2SD2226K
SMT3
VW
BJ∗
T146
3000
2SD2227S
SPT
VW
−
TP
5000
1.25
2.1
ROHM : UMT3
EIAJ : SC-70
0.1Min.
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2SD2226K
1.6
2.8
ROHM : SMT3
EIAJ : SC-59
0.3Min.
Each lead has same dimensions
2SD2227S
42
(1) Emitter
(2) Base
(3) Collector
ROHM : SPT
EIAJ : SC-72
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Rev.A
1/3
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Transistors
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
60
50
12
−
−
−
820
−
−
Typ.
−
−
−
−
−
−
−
250
3.5
Max.
−
−
−
0.3
0.3
0.3
2700
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=50V
VEB=12V
IC/IB=50mA/5mA
VCE/IC=5V/1mA
VCE=5V, IE=−10mA, f=100MHz
VCB=5V, IE=0A, f=1MHz
∗
∗
∗
zElectrical characteristics curves
2.0
Ta=25°C
1.2µA
1.6 2.0µA
1.8µA
1.6µA
1.2 1.4µA
1.0µA
0.8µA
0.6µA
0.8
0.4µA
0.4 0.2µA
IB=0
00 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics ( Ι )
200
500µA
160 450µA
400µA
350µA
300µA
120
250µA
200µA
150µA
100µA
80 50µA
40
00
Ta=25°C
Measured
using pulse current
48
12
IB=0
16 20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
200
VCE=5V
100
50
20
10
5
2
1
0.5
0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
1000
500
200
100
50
Ta=25°C
Measured
using pulse current
VCE=10V
5V
3V
20
10
0.2 0.5 1 2
5 10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
10000
5000
2000
1000
500
Ta=100°C
25°C
VCE=5V
Measured
using pulse current
−25°C
200
100
50
20
10
0.2 0.5 1 2
5 10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
1000
500
Ta=25°C
200
100
IC / IB=50
50
20
20 10
10
5
2
1
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
Rev.A
2/3
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Transistors
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
1000
500
IC / IB=10
200
100
Ta=100°C
50
25°C
20
10 −25°C
5
2
1
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
10000
5000
Ta=25°C
2000
1000
500
200
100
50
IC/IB=10
20
50
20
10
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( Ι )
10000
5000
IC/IB=10
2000
1000
500
200
100
50
Ta= −25°C
25°C
100°C
20
10
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( ΙΙ )
1000
500
200
100
50
20
10
5
Ta=25°C
2
VCE=5V
Measured
1 using pulse current
−1 −2 −5 −10 −20
−50 −100−200 −500−1000
EMITTER CURRENT : IE (mA)
Fig.10 Gain bandwidth product
vs. emitter current
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
1
0.1 0.2
0.5 1
2
5 10 20 50 100
COLLRCTOR TO BASE VOLTAGE : VCB (V)
Fig.11 Collector output capacitance
vs. collector-base voltage
100
Ta=25°C
50 f=1kHz
Vi=100mV(rms)
RL=1kΩ
20
10
5
2
1
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5 1
2
5 10
IB (mA)
Fig.12 Output on resistance
vs. base current
Rev.A
3/3
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Номер в каталоге | Описание | Производители |
2SD2226K | General Purpose Transistor (50V/ 0.15A) | ROHM Semiconductor |
2SD2226K | (2SD2xxx) General Purpose Transistor (50V/ 0.15A) | ROHM Semiconductor |
2SD2226K | (2SDxxxx) MEDIUM POWER TRANSISTOR | ROHM Semiconductor |
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