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K9F2G08X0A PDF даташит

Спецификация K9F2G08X0A изготовлена ​​​​«Samsung Electronics» и имеет функцию, называемую «(K9F2G08UxA) Flash Memory».

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Номер произв K9F2G08X0A
Описание (K9F2G08UxA) Flash Memory
Производители Samsung Electronics
логотип Samsung Electronics логотип 

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K9F2G08X0A Даташит, Описание, Даташиты
K9F2G08R0A
K9F2G08U0A
FLASH MEMORY
K9F2G08UXA
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INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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K9F2G08X0A Даташит, Описание, Даташиты
K9F2G08R0A
K9F2G08U0A
Document Title
256M x 8 Bit NAND Flash Memory
Revision History
Revision No History
0.0 1. Initial issue
0.1 1. 1.8V part is added.
2. tRHW, tCSD parameter is defined.
3. 4G DDP LGA part is deleted.
4. Technical note is added.(p.18)
0.2 1. FBGA package size is changed
2. 1.8V TSOP is deleted
0.3 1. 1.8V Ioh/Iol condition is changed
2. Min. tADL @ 3.3V is changed form 70ns to 100ns
0.4 1. 1.8V device supports Copy-Back Program
1.0
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FLASH MEMORY
Draft Date Remark
Nov. 09. 2005 Advance
Mar. 17th. 06 Advance
May 25th 2006 Preliminary
June 1st 2006 Preliminary
June 29th 2006 Preliminary
Aug 23th 2006 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
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K9F2G08X0A Даташит, Описание, Даташиты
K9F2G08R0A
K9F2G08U0A
256M x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F2G08R0A-J
K9F2G08U0A-P
K9F2G08U0A-I
Vcc Range
1.65 ~ 1.95V
2.70 ~ 3.60V
FLASH MEMORY
Organization
X8
PKG Type
FBGA
TSOP1
52ULGA
FEATURES
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Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25μs(Max.)
- Serial Access : 25ns(Min.)
(*K9F2G08R0A: tRC = 45ns(Min))
Fast Write Cycle Time
- Page Program time : 200μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
Command Driven Operation
Intelligent Copy-Back with internal 1bit/528Byte EDC
Unique ID for Copyright Protection
Package :
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns(45ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0As extended reli-
ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
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Номер в каталогеОписаниеПроизводители
K9F2G08X0A(K9F2G08UxA) Flash MemorySamsung Electronics
Samsung Electronics

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